Application-Oriented Growth of a Molybdenum Disulfide (MoS) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition.

In the 2D material framework, molybdenum disulfide (MoS) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS remains a challenge for distinct practical applications from electronics to electrocatalysis. Among the proposed methods, chemical vapor deposition (CVD) is a promising way for synthesizing high-quality MoS from isolated domains to a continuous film because of its high flexibility.