Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc-SiO:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc-SiO:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc-SiO:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure.
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November 2023
The preferential orientation of the perovskite (PVK) is typically accomplished by manipulation of the mixed cation/halide composition of the solution used for wet processing. However, for PVKs grown by thermal evaporation, this has been rarely addressed. It is unclear how variation in crystal orientation affects the optoelectronic properties of thermally evaporated films, including the charge carrier mobility, lifetime, and trap densities.
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December 2019
Broadband transparent conductive oxide layers with high electron mobility () are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped InO thin films with high (>60 cm V s) have been extensively investigated, the research regarding anion doping is still under development. In particular, fluorine-doped indium oxide (IFO) shows promising optoelectrical properties; however, they have not been tested on c-Si solar cells with passivating contacts.
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