InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection.

Detection of short-wave infrared (SWIR) and mid-wave infrared (MWIR) emissions remains challenging despite their importance in many emerging applications, including night vision, space imaging and remote sensing. III-V compound semiconductor materials such as InAs have an ideal band gap covering a spectral regime from near-infrared (NIR), SWIR to MWIR. However, due to their high dark current, InAs photodetectors normally require a low-temperature operation, which has greatly limited their practical applications.