Micromachines (Basel)
May 2024
In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations. A deep trench filled with P-poly-Si combined with the P-SiC region leads to a charge balance effect. Instead of a full-SiC P region in conventional super-junction MOSFET, this new structure reduces the P region in a super-junction MOSFET, thus helping to lower the specific on-resistance.
View Article and Find Full Text PDFThe fusion of infrared and visible images is a well-researched task in computer vision. These fusion methods create fused images replacing the manual observation of single sensor image, often deployed on edge devices for real-time processing. However, there is an issue of information imbalance between infrared and visible images.
View Article and Find Full Text PDFMaterials (Basel)
September 2022
Ni35 coatings were fabricated on 45 steel using a CO laser at various parameters. A relatively large spot (10 mm diameter) was adopted, which was beneficial to the coating quality and the cladding efficiency. The cross-sectional geometry, phase constituent, and microstructure of the coatings were investigated.
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