Author Correction: Impact of pore anisotropy on the thermal conductivity of porous Si nanowires.

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Impact of pore anisotropy on the thermal conductivity of porous Si nanowires.

Porous materials display enhanced scattering mechanisms that greatly influence their transport properties. Metal-assisted chemical etching (MACE) enables fabrication of porous silicon nanowires starting from a doped Si wafer by using a metal template that catalyzes the etching process. Here, we report on the low thermal conductivity (κ) of individual porous Si nanowires (NWs) prepared from MACE, with values as low as 0.

In-plane thermal conductivity of sub-20 nm thick suspended mono-crystalline Si layers.

We measure the thermal conductivity of a 17.5-nm-thick single crystalline Si layer by using a suspended structure developed from a silicon-on-insulator wafer, in which the Si layer bridges the suspended platforms. The obtained value of 19 Wm(-1) K(-1) at room temperature represents a tenfold reduction with respect to bulk Si.

Material damage induced by nanofabrication processes in manganite thin films.

We investigated the use of the focused ion-beam (FIB) technique as a nanofabrication tool for the implementation of oxide-based magnetic and magnetoelectronic functional devices. In particular, we studied the effect of using FIB lithography for the patterning of La(2/3)Ca(1/3)MnO(3) magnetic oxide thin films. Results obtained show that the transport properties of patterned areas were strongly degraded after the patterning process.