New Solution-Processed Surface Treatment to Improve the Photovoltaic Properties of Electrodeposited Cu(In,Ga)Se (CIGSe) Solar Cells.

The surface Ga content for a CIGSe absorber was closely related to variation in the open-circuit voltage (), while it was generally low on a CIGSe surface fabricated by two-step selenization. In this work, a solution-processed surface treatment based on spin-coating GaCl solution onto a CIGSe surface was applied to increase the Ga content on the surface. XPS, XRD, Raman spectroscopy, and band gap extraction based on the external quantum efficiency response demonstrated that GaCl post deposition treatment (GaCl-PDT) can be used to enhance the Ga content on the surface of a CIGSe absorber.

A Novel Metal Precursor Structure for Electrodepositing Ultrathin CIGSe Thin-Film Solar Cell with High Efficiency.

The two-step process of electrodeposition and selenization is one of the most effective methods for producing CIGSe and CZTSe solar cells at a low cost. However, it is difficult to prepare the ultrathin CIGSe absorber by electrodeposition due to the nonuniform deposition of Cu on the Mo substrate. In this study, Cu was deposited on a Sb film instead of a Mo film, and the 3D growth mode of Cu was changed.

Formation of Cl-Doped ZnO Thin Films by a Cathodic Electrodeposition for Use as a Window Layer in CIGS Solar Cells.

Zinc oxide films that are prepared by radio frequency (RF) sputtering are widely used as window layers in copper indium gallium diselenide (CIGS) solar cells. To reduce their production cost, the electrodeposition method for preparing Cl-doped zinc oxide (ZnO:Cl), rather than sputtering, was studied. The electrodeposition parameters of injected current density and the pH of the electrolyte solution were studied.

Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer.

Double layer distribution exists in CuSnZnSe (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double-layer distribution of CZTSe film is eliminated entirely and the formation of MoSe interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSe mixed atmosphere.

Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe₂ Film during Selenization in Se+SnSe Vapor.

The preparation of Cu₂ZnSnSe₄ (CZTSe) thin films by the selenization of an electrodeposited copper-tin-zinc (CuSnZn) precursor with various Sn contents in low-pressure Se+SnSe vapor was studied. Scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) measurements revealed that the Sn content of the precursor that is used in selenization in a low-pressure Se+SnSe vapor atmosphere only slightly affects the elemental composition of the formed CZTSe films. However, the Sn content of the precursor significantly affects the grain size and surface morphology of CZTSe films.

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure.

Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin.