Construction of Linear Tetramer-Type Acceptors for High-Efficiency and High-Stability Organic Solar Cells.

Thanks to the development of non-fullerene acceptor (NFA) materials, the photovoltaic conversion efficiency (PCE) of organic solar cells (OSCs) has exceeded 20 %, which has met the requirements for commercialisation. In the current stage, the main focus is to balance the performance and stability. It has been shown that all-polymer formulation can improve device stability, however, PCE is not in satifsfaction, and the batch-to-batch variation leads to quality control issues.

Unlocking amplified magneto-photocurrent using multi-field manipulation in nonfullerene organic bulk heterojunction systems.

An effective manipulation of polaron pairs (PPs) for realizing amplified magneto-photocurrent (AMPC) is of critical importance toward the development of low power consumption and high-performance organic spin-optoelectronic devices, for instance magneto-photo-volatile memories. By far, it is challenging and there is a lack of method to reach AMPC. The typical magneto-photocurrent due to the light-matter interanion is primarily for unveiling the spin-dependent electron-hole dissociation in organic solar cells.

Impact of Bychkov-Rashba Spin Splitting on Dual Emissions for Lead Halide Perovskite Nanowires.

Bychkov-Rashba spin-orbit coupling (SOC) is decisive for photoinduced photoluminescence (PL) in terms of double emissions. It turns out to be remarkable for one-dimensional lead halide perovskite nanowires (PeNWs). This is primarily due to large surface to volume ratios and structural symmetry breaking fields in the reduced dimension.

Spin-photogalvanic effect in chiral lead halide perovskites.

Low-temperature solution-made chiral lead halide perovskites (LHPs) have spontaneous Bychkov-Rashba spin orbit coupling (SOC) and chiral-induced spin selectivity (CISS) qualities. Their coexistence may give rise to considerable spin and charge conversion capabilities for spin-orbitronic applications. In this study, we demonstrate the spin-photogalvanic effect for (-MBA)PbI and (-MBA)PbI polycrystalline film-based lateral devices (100 μm channel length).