Publications by authors named "Livia P Pozzi"

Article Synopsis
  • The study focuses on the structural and electrical properties of individual Sn-doped In(2)O(3) nanowires.
  • Key findings indicate that electron mobility decreases with increasing temperature, highlighting the influence of electron-phonon interactions on electrical performance.
  • The calculated electron density was found to be n = 5 x 10(24) cm(-3), confirming the metallic nature of the nanowires.
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In this work, we present transport measurements of individual Sn-doped In2O3nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.

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We report on (magneto-) transport measurements of individual In2O3 nanowires. We observed that the presence of a weak disorder arising from doping and electron-boundary collisions leads to weak localization of electrons as revealed by the positive magnetoconductivity in a large range of temperatures ( approximately 77 K). From temperature-dependent resistance and magnetoconductivity data, the electron-electron interaction was pointed out as the mechanism responsible for the increase of resistance in the low temperature range and the dominant source of the dephasing at low temperatures.

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