In this work, we present transport measurements of individual Sn-doped In2O3nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.
View Article and Find Full Text PDFWe report on (magneto-) transport measurements of individual In2O3 nanowires. We observed that the presence of a weak disorder arising from doping and electron-boundary collisions leads to weak localization of electrons as revealed by the positive magnetoconductivity in a large range of temperatures ( approximately 77 K). From temperature-dependent resistance and magnetoconductivity data, the electron-electron interaction was pointed out as the mechanism responsible for the increase of resistance in the low temperature range and the dominant source of the dephasing at low temperatures.
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