A triradical-containing trinuclear Pd(II) complex: spin-polarized electronic transmission, analog resistive switching and neuromorphic advancements.

Neuromorphic computation has emerged as a potential alternative to subvert the von Neumann bottleneck issue in conventional computing. In this context, the development of resistive switching-based memristor devices mimicking various synaptic functionalities has engendered paramount attention. Here, we report a triradical-containing trinuclear Pd(II) cluster with a cyclohexane-like framework constituted by the Pd-Se coordination motif displaying facile memristor property with neuromorphic functionality as a thin-film device.

Unveiling Negative Differential Resistance and Superionic Conductivity: Water Anchored on Layered Materials.

Unravelling the perplexing nature of negative differential resistance (NDR) in 2D transition metal dichalcogenide (2D TMD) devices, especially regarding intrinsic properties, is hindered by experiments conducted in ambient environments. A thorough investigation is essential for unveiling the actual mechanism. In this study, we provide compelling evidence of the NDR effect with a remarkably high peak-to-valley current ratio and proton-diffused superionic conductivity in quantum-confined water molecules anchored to a thin film of 2D TMDs.

A Singlet-Diradical Co(III)-Dimer as a Nonvolatile Resistive Switching Device: Synthesis, Redox-Induced Interconversion, and Current-Voltage Characteristics.

Herein we report a ligand-centered redox-controlled strategy for the synthesis of an unusual binuclear diradical cobalt(III) complex, [Co(L)] (), featuring two three-electron reduced trianionic monoradical 2,9-bis(phenyldiazo)-1,10-phenanthroline ligands () and two intermediate-spin cobalt(III) centers having a Co-Co bond. Controlled ligand-centered oxidation of afforded two mononuclear complexes, [Co(L)(L)] ([]) and [Co(L)] ([]), which upon further ligand-centered reduction yielded a di-azo-anion diradical complex, [Co(L)] (). In complex , two three-electron reduced di-azo-anion monoradical ligands () bridge two intermediate Co(III) centers at a distance of 2.

Electroforming-free nonvolatile resistive switching of redox-exfoliated MoSnanoflakes loaded polystyrene thin film with synaptic functionality.

Here, we report robust and highly reproducible nonvolatile resistive switching (RS) devices with artificial synaptic functionalities utilizing redox-exfoliated few-layered 2H-MoSnanoflakes. Advantageous polar solvent compatibility of 2D MoSfrom this method were utilized to fabricate thin film devices very easily and cost-effectively using polystyrene as matrix. Prominent RS property of polystyrene thin film devices with varying MoSconcentrations strongly favors electroforming-free operation.