Interfacial Defect-Mediated Near-Infrared Silicon Photodetection with Metal Oxides.

Due to recent breakthroughs in silicon photonics, sub-band-gap photodetection in silicon (Si) has become vital to the development of next-generation integrated photonic devices for telecommunication systems. In particular, photodetection in Si using complementary metal-oxide semiconductor (CMOS) compatible materials is in high demand for cost-effective integration. Here, we achieve broad-band near-infrared photodetection in Si/metal-oxide Schottky junctions where the photocurrent is generated from interface defects induced by aluminum-doped zinc oxide (AZO) films deposited on a Si substrate.

Pulsed laser deposition films from a BaFeMoO target onto SrTiO[001]: Chemical and magnetic inhomogeneity.

Pulsed laser deposition films from BaFeMoO (BFMO) targets onto SrTiO[001] (STO) substrates have been reported previously to have non-zero magnetism at 300 K, a majority of magnetic ordering at 240 K that is less than the 370 K ordering temperature of polycrystalline BFMO, and suppressed saturation magnetization compared to polycrystalline BFMO. To interrogate these previously reported observations of BFMO on STO, we have used a combination of x-ray diffraction, atomic force microscopy, x-ray and neutron reflectivity, and x-ray photoelectron spectroscopy that shows inhomogeneities. The present results show off-stoichiometry on the A-site by incorporation of Sr from the substrate and on the B-site to have %Fe/%Mo > 1 by evolution of BaMoO.