Zn-Doped P-Type InAs Nanocrystal Quantum Dots.

Doped heavy metal-free III-V semiconductor nanocrystal quantum dots (QDs) are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p-n homojunction devices. InAs nanocrystals (NCs), that are of particular relevance for short-wave IR detection and emission applications, manifest heavy n-type character poising a challenge for their transition to p-type behavior. The p-type doping of InAs NCs is presented with Zn - enabling control over the charge carrier type in InAs QDs field effect transistors.

Luminescent Anisotropic Wurtzite InP Nanocrystals.

Indium phosphide (InP) nanocrystals are emerging as an alternative to heavy metal containing nanocrystals for optoelectronic applications but lag behind in terms of synthetic control. Herein, luminescent wurtzite InP nanocrystals with narrow size distribution were synthesized via a cation exchange reaction from hexagonal CuP nanocrystals. A comprehensive surface treatment with NOBF was performed, which removes excess copper while generating stoichiometric In/P nanocrystals with fluoride surface passivation.