Electrical Contacts in Monolayer MoSiN Transistors.

The latest synthesized monolayer (ML) MoSiN material exhibits stability in ambient conditions, suitable bandgap, and high mobilities. Its potential as a next-generation transistor channel material has been demonstrated through quantum transport simulations. However, in practical two-dimensional (2D) material transistors, the electrical contacts formed by the channel and the electrode must be optimized, as they are crucial for determining the efficiency of carrier injection.

Sub-5 nm Ultrathin InO Transistors for High-Performance and Low-Power Electronic Applications.

Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, ultrathin indium oxide (InO) field-effect transistors (FETs) with thicknesses down to 0.4 nm exhibit an extremely high drain current (10 μA/μm) and transconductance (4000 μS/μm).

Performance Limit of Ultrathin GaAs Transistors.

High-electron-mobility group III-V compounds have been regarded as a promising successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide (GaAs) is an outstanding member of the III-V family due to its advantage of both good n- and p-type device performance. Monolayer (ML) GaAs is the limit form of ultrathin GaAs.

Improvement of alkali metal ion batteries via interlayer engineering of anodes: from graphite to graphene.

Interlayer engineering of graphite anodes in alkali metal ion (M = Li, Na, and K) batteries is carried out based on the first-principles calculations. By increasing the interlayer spacing of graphite, the specific capacity of Li or Na does not increase while that of K increases continuously (from 279 mA h g at the equilibrium interlayer spacing to 1396 mA h g at the interlayer spacing of 20.0 Å).

Can ultra-thin Si FinFETs work well in the sub-10 nm gate-length region?

Fin field-effect transistors (FinFETs) dominate the present Si FETs. However, when the gate length is scaled down to the sub-10 nm region, the experimental Si FinFETs suffer from poor performance due to a large fin width (the minimum value is 3 nm). In this paper, an ultra-thin Si FinFET with a width of 0.

First-principles simulation of monolayer hydrogen passivated BiOS-metal interfaces.

Monolayer (ML) MoS2 is one of the most extensively studied two-dimensional (2D) semiconductors. However, it suffers from low carrier mobility and pervasive Schottky contact with metal electrodes. 2D semiconductor Bi2O2S, a sulfur analogue of 2D Bi2O2Se, has been prepared recently.

Polylysine and cysteine functionalized chitosan nanoparticle as an efficient platform for oral delivery of paclitaxel.

A novel chitosan-based multifunctional nanoparticle (PY-CS-PLA) using cationic polylysine (PL) polymer and L-cysteine has been developed and investigated for the oral delivery of paclitaxel (PTX). As amphiphilic polymer, PY-CS-PLA presented good capability in self-assembling into spherical nanoparticle with mean size of 165 nm, and encapsulating PTX into the hydrophobic core. The encapsulated PTX was observed to be sustainedly released from the functionalized chitosan nanoparticle, and with a positive correlation to the pH value of the medium in the range of 1.