Ti C T MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors.

Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti C T MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding.

On-chip plasmonic waveguide optical waveplate.

Polarization manipulation is essential in almost every photonic system ranging from telecommunications to bio-sensing to quantum information. This is traditionally achieved using bulk waveplates. With the developing trend of photonic systems towards integration and miniaturization, the need for an on-chip waveguide type waveplate becomes extremely urgent.

Active metal strip hybrid plasmonic waveguide with low critical material gain.

An active metal strip hybrid plasmonic waveguide (MSHPW) using gain materials as loss compensation is proposed with an extremely simple fabrication procedure. Gain materials are introduced either in the low-index layer or in the high-index layer of MSHPW. The effects of waveguide dimensions and material gain coefficients on loss compensation are analyzed at the communication wavelength.