Large reaction rate enhancement in formation of ultrathin AuSi eutectic layers.

Metal-semiconductor eutectic liquids play a key role in both the fundamental understanding of atomic interactions and nanoscale synthesis and catalysis. At reduced sizes they exhibit properties distinct from the bulk. In this work we show an unusual effect that the formation of AuSi eutectic liquid layers is much easier for smaller thicknesses.

Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studies.

Transmission Electron Microscopy (TEM) and X-ray diffraction (XRD) have been used to study compositional modulation in In(x)Ga(1-x) N layers grown with compositions close to miscibility gap. The samples (0.34 < x < 0.

Atomic structure of defects in GaN:Mg grown with Ga polarity.

The atomic structure of characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in GaN:Mg thin films grown with Ga polarity was determined at atomic resolution by reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities within the defects have inside walls covered by GaN of reverse polarity. We propose that lateral overgrowth of the cavities restores matrix polarity on the defect base.

Screw dislocations in GaN grown by different methods.

A study of screw dislocations in hydride-vapor-phase-epitaxy (HVPE) template and molecular-beam-epitaxy (MBE) overlayers was performed using transmission electron microscopy (TEM) in plan view and in cross section. It was observed that screw dislocations in the HVPE layers were decorated by small voids arranged along the screw axis. However, no voids were observed along screw dislocations in MBE overlayers.

Derivation of growth mechanism of nano-defects in GaN from TEM data.

Transmission electron microscopy (TEM) has been used to describe 'hollow' defects, e.g. nanotubes and pinholes (empty inside) formed in GaN hetero- and homoepitaxial layers.