Materials (Basel)
January 2025
Gallium-based light-emitting diodes (LEDs), including AlGaInP and GaN, have become the most widely used light-emitting devices in modern scientific research and practical applications. However, structures like carrier injection layers, active layers, and quantum well layers ensure the high luminescence efficiency of LEDs but also limit their applications at the micro- and nanoscale. Although the next generation of micrometer-scale light-emitting diodes (Micro-LEDs) has alleviated these issues to some extent, challenges such as edge effects and etching damage caused by size reduction lead to lower luminous efficiency and shorter lifetimes.
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