Graphene and graphene-related materials as brain electrodes.

Neural electrodes are used for acquiring neuron signals in brain-machine interfaces, and they are crucial for next-generation neuron engineering and related medical applications. Thus, developing flexible, stable and high-resolution neural electrodes will play an important role in stimulation, acquisition, recording and analysis of signals. Compared with traditional metallic electrodes, electrodes based on graphene and other two-dimensional materials have attracted wide attention in electrophysiological recording and stimulation due to their excellent physical properties such as unique flexibility, low resistance, and high optical transparency.

New Half-Metallic Materials: FeRuCrP and FeRhCrP Quaternary Heusler Compounds.

The electronic structures and magnetic properties of FeRuCrP and FeRhCrP quaternary Heusler compounds with LiMgPbSb-type structures have been investigated via first-principles calculations. The calculational results show that both FeRuCrP and FeRhCrP compounds present perfect half-metallic properties: Showing large half-metallic band gaps of 0.39 eV and 0.

The Role of Air Adsorption in Inverted Ultrathin Black Phosphorus Field-Effect Transistors.

Few-layer black phosphorus (BP) attracts much attention owing to its high mobility and thickness-tunable band gap; however, compared with the commonly studied transition metal dichalcogenides (TMDCs), BP has the unfavorable property of degrading in ambient conditions. Here, we propose an inverted dual gates structure of ultrathin BP FET to research the air adsorption on BP. In fabrication process of back-gate BP FET, BP was transferred directly onto a wafer covered with electrodes.

Orbital Reconstruction Enhanced Exchange Bias in La0.6Sr0.4MnO3/Orthorhombic YMnO3 Heterostructures.

The exchange bias in ferromagnetic/multiferroic heterostructures is usually considered to originate from interfacial coupling. In this work, an orbital reconstruction enhanced exchange bias was discovered. As La0.

Enhance photoelectrochemical hydrogen-generation activity and stability of TiO2 nanorod arrays sensitized by PbS and CdS quantum dots under UV-visible light.

We develop a composite photoanode by sensitizing TiO2 nanorod arrays with PbS quantum dots (QDs) and CdS QDs. Benefitted from additional introduced PbS QDs and CdS QDs onto TiO2, the absorption of the composite photoanodes are broaden from UV to visible region. The experimental results showed that the PbS sandwiched between TiO2 and CdS cannot only broad the absorption properties but also improve the stability.

Monolayer semiconductor nanocavity lasers with ultralow thresholds.

Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC).

Stimulated emission in GaN-based laser diodes far below the threshold region.

We identify that the stimulated emission of GaN laser diodes (LDs) emerges far below the traditionally recognized threshold from both optical and electrical experiments. Below the threshold, the linear-polarized stimulated emission has been the dominating part of overall emission and closely related to resonant cavity. Its intensity increases super linearly with current while that of spontaneous emission increases almost linearly.