Perovskite semiconductors like methylammonium and cesium lead halides have gained popularity for radiation detection due to their outstanding electronic and optical properties.
The combination of perovskites with materials like metal oxide semiconductors allows for the development of effective diodes that can detect various types of radiation with low power requirements.
This study presents a novel neutron detector using a heterojunction diode made from single-crystal MAPbBr and gallium oxide, achieving impressive performance metrics such as a low leakage current and high detection efficiency for neutrons while enhancing gamma discrimination by optimizing crystal thickness.
Two-dimensional semiconductors like transition-metal dichalcogenides (TMDs) offer superior electronic and optical properties, making them ideal for photodetector applications when combined with Si or II-VI semiconductors.
The study details the deposition of MoSe films using pulsed laser deposition, highlighting characteristics like crystalline orientation and the chemical makeup of the layers through various analytical techniques.
With increasing MoSe thickness, the band gap and electrical properties show significant changes, leading to impressive performance metrics for MoSe-Si photodiodes, such as rapid photocurrent response and high current on/off ratios.