Electrical Contacts in Monolayer MoSiN Transistors.

The latest synthesized monolayer (ML) MoSiN material exhibits stability in ambient conditions, suitable bandgap, and high mobilities. Its potential as a next-generation transistor channel material has been demonstrated through quantum transport simulations. However, in practical two-dimensional (2D) material transistors, the electrical contacts formed by the channel and the electrode must be optimized, as they are crucial for determining the efficiency of carrier injection.

Sub-5 nm Ultrathin InO Transistors for High-Performance and Low-Power Electronic Applications.

Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, ultrathin indium oxide (InO) field-effect transistors (FETs) with thicknesses down to 0.4 nm exhibit an extremely high drain current (10 μA/μm) and transconductance (4000 μS/μm).

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study.

We conduct a comprehensive theoretical analysis of wurtzite GaInN ternary alloys, focusing on their structural, electronic, elastic, piezoelectric, and dielectric properties through rigorous first-principles calculations. Our investigation systematically explores the influence of varying Ga composition ( = 0%, 25%, 50%, 75%, 100%) on the alloy properties. Remarkably, we observe a distinctive non-linear correlation between the band gap and Ga concentration, attributable to unique slopes in the absolute positions of the valence band maximum and conduction band minimum with respect to Ga concentration.

Lyophilized mRNA-lipid nanoparticle vaccines with long-term stability and high antigenicity against SARS-CoV-2.

Advanced mRNA vaccines play vital roles against SARS-CoV-2. However, most current mRNA delivery platforms need to be stored at -20 °C or -70 °C due to their poor stability, which severely restricts their availability. Herein, we develop a lyophilization technique to prepare SARS-CoV-2 mRNA-lipid nanoparticle vaccines with long-term thermostability.

Phase transition and topological transistors based on monolayer NaBi nanoribbons.

Recently, a topological-to-trivial insulator quantum-phase transition induced by an electric field has been experimentally reported in monolayer (ML) and bilayer (BL) NaBi. A narrow ML/BL NaBi nanoribbon is necessary to fabricate a high-performance topological transistor. By using the density functional theory method, we found that wider ML NaBi nanoribbons (>7 nm) are topological insulators, featured by insulating bulk states and dissipationless metallic edge states.

First-principles simulation of monolayer hydrogen passivated BiOS-metal interfaces.

Monolayer (ML) MoS2 is one of the most extensively studied two-dimensional (2D) semiconductors. However, it suffers from low carrier mobility and pervasive Schottky contact with metal electrodes. 2D semiconductor Bi2O2S, a sulfur analogue of 2D Bi2O2Se, has been prepared recently.

Sub-5 nm monolayer black phosphorene tunneling transistors.

The successful fabrication of sub-5 nm 2D MoS field-effect transistors (FETs) announces the approaching post-silicon era. It is possible for tunneling field-effect transistors (TFETs) based on monolayer black phosphorene (ML BP) to work well in the sub-5 nm region because of its moderate direct band gap, anisotropic electronic properties and high carrier mobility. We simulate the device performance limit of the ML BP TFETs at the sub-5 nm scale using ab initio quantum transport calculations.

NH3 assisted photoreduction and N-doping of graphene oxide for high performance electrode materials in supercapacitors.

Nitrogen-doped graphene was synthesized by simple photoreduction of graphene oxide (GO) deposited on nickel foam under NH3 atmosphere. The combination of photoreduction and NH3 not only reduces the GO in a shorter time but also induces nitrogen doping easily. The nitrogen doped content of N-rGO@NF reaches a high of 5.

Direct formation of reduced graphene oxide and 3D lightweight nickel network composite foam by hydrohalic acids and its application for high-performance supercapacitors.

Here, a novel graphene composite foam with 3D lightweight continuous and interconnected nickel network was successfully synthesized by hydroiodic (HI) acid using nickel foam as substrate template. The graphene had closely coated on the backbone of the 3D nickel conductive network to form nickel network supported composite foam without any polymeric binder during the HI reduction of GO process, and the nickel conductive network can be maintained even in only a small amount of nickel with 1.1 mg/cm(2) and had replaced the traditional current collector nickel foam (35 mg/cm(2)).

Facile synthesis of nickel network supported three-dimensional graphene gel as a lightweight and binder-free electrode for high rate performance supercapacitor application.

Here we report a simple strategy to prepare three-dimensional graphene gel coated on nickel foam for supercapacitor applications by a simple 'dipping and drying' process. The supercapacitors based on three-dimensional graphene gel (G-gel@NF-1) exhibited high rate capability of 152 F g(-1) at 0.36 A g(-1) and 107 F g(-1) at 90.