Identification of Healthy Tissue from Malignant Tissue in Surgical Margin Using Raman Spectroscopy in Oral Cancer Surgeries.

Accurate identification of tissue types in surgical margins is essential for ensuring the complete removal of cancerous cells and minimizing the risk of recurrence. The objective of this study was to explore the clinical utility of Raman spectroscopy for the detection of oral squamous cell carcinoma (OSCC) in both tumor and healthy tissues obtained from surgical resection specimens during surgery. This study enrolled a total of 64 patients diagnosed with OSCC.

Developing an Algorithm for Discriminating Oral Cancerous and Normal Tissues Using Raman Spectroscopy.

The aim of this study was to investigate the clinical potential of Raman spectroscopy (RS) in detecting oral squamous cell carcinoma (OSCC) in tumor and healthy tissues in surgical resection specimens during surgery. Raman experiments were performed on cryopreserved specimens from patients with OSCC. Univariate and multivariate analysis was performed based on the fingerprint region (700-1800 cm-1) of the Raman spectra.

Surface Acoustic Wave Sensor for C-Reactive Protein Detection.

A surface acoustic wave (SAW) sensor was investigated for its application in C-reactive protein (CRP) detection. Piezoelectric lithium niobate (LiNbO) substrates were used to study their frequency response characteristics in a SAW sensor with a CRP sensing area. After the fabrication of the SAW sensor, the immobilization process was performed for CRP/anti-CRP interaction.

Novel Quantitative Analysis Using Optical Imaging (VELscope) and Spectroscopy (Raman) Techniques for Oral Cancer Detection.

In this study, we developed a novel quantitative analysis method to enhance the detection capability for oral cancer screening. We combined two different optical techniques, a light-based detection technique (visually enhanced lesion scope) and a vibrational spectroscopic technique (Raman spectroscopy). Thirty-five oral cancer patients who went through surgery were enrolled.

Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors.

Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (GaO) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics.

Effects of Annealing on Characteristics of CuZnSnSe/CHNHPbI/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells.

This paper presents new photovoltaic solar cells with CuZnSnSe/CHNHPbI(MAPbI)/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of CuZnSnSe, MAPbI perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI perovskite film was deposited on CuZnSnSe hole-transporting layer that has been annealed at different temperatures.

Multiclass classification of autofluorescence images of oral cavity lesions based on quantitative analysis.

Background: Oral cancer is one of the most common diseases globally. Conventional oral examination and histopathological examination are the two main clinical methods for diagnosing oral cancer early. VELscope is an oral cancer-screening device that exploited autofluorescence.

Raman Spectroscopy Analysis for Optical Diagnosis of Oral Cancer Detection.

Raman spectroscopy (RS) is widely used as a non-invasive technique in screening for the diagnosis of oral cancer. The potential of this optical technique for several biomedical applications has been proved. This work studies the efficacy of RS in detecting oral cancer using sub-site-wise differentiation.

Formation of Cl-Doped ZnO Thin Films by a Cathodic Electrodeposition for Use as a Window Layer in CIGS Solar Cells.

Zinc oxide films that are prepared by radio frequency (RF) sputtering are widely used as window layers in copper indium gallium diselenide (CIGS) solar cells. To reduce their production cost, the electrodeposition method for preparing Cl-doped zinc oxide (ZnO:Cl), rather than sputtering, was studied. The electrodeposition parameters of injected current density and the pH of the electrolyte solution were studied.

RGB-Stack Light Emitting Diode Modules with Transparent Glass Circuit Board and Oil Encapsulation.

The light emitting diode (LED) is widely used in modern solid-state lighting applications, and its output efficiency is closely related to the submounts' material properties. Most submounts used today, such as low-power printed circuit boards (PCBs) or high-power metal core printed circuit boards (MCPCBs), are not transparent and seriously decrease the output light extraction. To meet the requirements of high light output and better color mixing, a three-dimensional (3-D) stacked flip-chip (FC) LED module is proposed and demonstrated.

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology.

Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED's color rendering index (CRI) are still problematic. Here, we use flip-chip technology to fabricate an upside down monolithic two-color phosphor-free LED with four grown layers of high indium quantum dots on top of the three grown layers of lower indium quantum wells separated by a GaN tunneling barrier layer.

Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe₂ Film during Selenization in Se+SnSe Vapor.

The preparation of Cu₂ZnSnSe₄ (CZTSe) thin films by the selenization of an electrodeposited copper-tin-zinc (CuSnZn) precursor with various Sn contents in low-pressure Se+SnSe vapor was studied. Scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) measurements revealed that the Sn content of the precursor that is used in selenization in a low-pressure Se+SnSe vapor atmosphere only slightly affects the elemental composition of the formed CZTSe films. However, the Sn content of the precursor significantly affects the grain size and surface morphology of CZTSe films.

Improving Efficiency of Multicrystalline Silicon and CIGS Solar Cells by Incorporating Metal Nanoparticles.

This work studies the use of gold (Au) and silver (Ag) nanoparticles in multicrystalline silicon (mc-Si) and copper-indium-gallium-diselenide (CIGS) solar cells. Au and Ag nanoparticles are deposited by spin-coating method, which is a simple and low cost process. The random distribution of nanoparticles by spin coating broadens the resonance wavelength of the transmittance.

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure.

Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin.

Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte.

We demonstrate enhanced repeatable nanoscale bipolar resistive switching memory characteristics in Al/Cu/Ge0.5Se0.5/W, as compared with Al/Cu/Ge0.