[The impact of ZnS/CdS composite window layer on the quantun efficiency of CdTe solar cell in short wavelength].

ZnS/CdS composite window layer was prepared by magnetron sputtering method and then applied to CdTe solar cell. The morphology and structure of films were measured. The data of I-V in light and the quantum efficiency of CdTe solar cells with different window layers were also measured.

Spectral analysis of the effects of 1.7 MeV electron irradiation on the current transfer characteristic of cadmium telluride solar cells.

The effects of device performance of 1.7 MeV electron irradiation on cadmium telluride polycrystalline thin film solar cells with the structure of anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe : Cu/Ni have been studied. Light and dark I-V characteristics, dark C-V characteristics, quantum efficiency (QE), admittance spectrum (AS) and other testing methods were used to analyze cells performance such as the open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF) and conversion efficiency (eta).

Silicon nanocrystals doping and surface modification.

Using the first-principles method based on density functional theory, at the generalized gradient approximation (GGA), the state density, the change of binding energy and the energy gap of the silicon nanocrystals (Si75H76) with the circumstances of boron (B)-doped , phosphorus (P)-doped and the surface modification with ethyl (CH2CH3), isopropyl (-CH(CH3)2) have been calculated. The results showed that the B or P-doped have little impact on the energy gap value (3.12 eV) of silicon nanocrystals (SiNcs), except that some energy levels will be introduced in the forbidden band.

[Preparation and properties of P-type Cd1-xZn(x)Te thin films].

Cd1-xZnxTe:Cu Thin films were prepared by co-evaporation method. X-ray Fluorescence Spectrometry (XRF), scanning electron microscope(SEM), UV-Vis transmission spectra, thermal probe, four-probe method, step profiler and X-ray diffractometer (XRD) were used to investigate the composition, structure, morphology, optical and electrical properties of Cd1-x ZnxTe:Cu thin films with different doping concentration. The results show that the resistivity of 10% copper doped Cd1-x ZnxTe films increased several magnitude and the conductive type changed from p-type to n-type after annealing.

[Study of the physical properties of SnS thin films deposited by ultrasonic spray pyrolysis method].

In the present paper, SnS thin films were deposited by ultrasonic spray pyrolysis method. The influence of the three different precursor concentrations on the properties of SnS thin films was compared. XRD shows that when precursor solution is thiourea (0.

[Spectral analysis of the effect of annealing on CdTe polycrystalline film].

Polycrystalline CdTe thin films were prepared by close-spaced sublimation (CCS) and were annealed in different condition. The thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy(XPS). The content distribution and valence state of all elements after annealing were studied.

[Study on back contact layer of CdTe solar cell by XPS].

ZnTe and ZnTe : Cu polycrystalline films were fabricated by means of co-evaporating at room temperature. The sturcture and distribution of various elements were studied by XPS and XRD. The XRD results show that the phase structure of the films deposited at different substrate temperature almost remains unchanged, XPS analysis shows that the compositional dependence of sputtering time is different for the films deposited at different deposition rate.

[Research on the polycrystalline CdS thin films prepared by close-spaced sublimation].

In the present paper, the factors of influence on the deposition rate of CdS films prepared by close-spaced sublimation (CSS) were first studied systematically, and it was found from the experiments that the deposition rate increased with the raised temperature of sublimation source, while decreased with the raised substrate temperature and the deposition pressure. The structure, morphology and light transmittance of the prepared samples were tested subsequently, and the results show: (1) The CdS films deposited under different oxygen partial pressure all present predominating growth lattice orientation (103), and further more the films will be strengthened after annealed under CdCl2 atmosphere. (2) The AFM images of CdS show that the films are compact and uniform in grain diameter, and the grain size becomes larger with the increased substrate temperature.

[Study on the back contact performances of cdte solar cells by XPS].

The metal materials with high work function should be used as the back electrode of CdTe solar cells. In the present paper, the back contact performances of CdTe solar cells with Au film and Ni film, respectively, were studied by X-ray photoelectron spectrum (XPS). After exfoliating the back electrode film, it was found that Au on the surface of ZnTe/ZnTe:Cu complex back contact layer is in the form of Au atoms and the concentration and depth of Ni diffusing into the ZnTe/ZnTe:Cu back contact layer are higher than that of Au.

[Preparation and spectral characterization of CdS(y)Te(1-y) thin films].

CdS(y)Te(1-y) (0 < or = y < or = 1) polycrystalline thin films were prepared on glass substrates by co-evaporation of powders of CdTe and CdS. For the characterization of the structure and composition of the CdS(y)Te(1-y) thin films the X-ray diffraction (XRD) and energy-dispersive spectroscopy (EDS) were used. The results indicate that the values of sulfur content y detected and controlled by the quartz wafer detector show good agreement with the EDS results.

[Spectral analysis of effects of annealing on the characteristics of intrinsic SnO2 polycrystalline thin films].

In order to improve the conversion efficiency of the CdTe solar cells, it is necessary to decrease the thickness of CdS layer. However, the decrease in CdS thickness may lead to adverse effects on the solar cells. Therefore, a high-resistance transparent layer (intrinsic SnO2) has been used as a buffer layer between the transparent conducting oxide (TCO) and CdS layer.

[Study on ZnTe (Znte:Cu) polycrystalline films by XPS].

ZnTe and ZnTe: Cu polycrystalline films were fabricated by means of co-evaporating at room temperature. The relationships between conductivity of the films and temperature were measured. Chemical compositions of ZnTe and ZnTe: Cu polycrystalline films were obtained by using XPS, and the changes of chemical composition before and after anneal were analyzed.

[Spectral analyzing effects of atmosphere states on the structure and characteristics of CdTe polycrystalline thin films made by close-spaced sublimation].

The structure and characteristics of CdTe thin films are dependent on the working atmosphere states in close-spaced sublimation. In the present paper, CdTe polycrystalline thin films were deposited by CSS in mixture atmosphere of argon and oxygen. The physical mechanism of CSS was analyzed, and the temperature distribution in CSS system was measured.