[Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature].

The polycrystalline silicon thin films play an important role in the field of electronics. In the paper, α-SiAl composite membranes on glass substrates was prepared by magnetron co-sputtering. The contents of Al radicals encapsulated-in the α-Si film can be adjusted by changing the Al to Si sputtering power ratios.

[Spectral Characteristics of Si Quantum Dots Embedded in SiN(x) Thin Films Prepared by Magnetron Co-Sputtering].

The silicon-rich SiN(x) films were fabricated on Si(100) substrate and quartz substrate at different substrate temperatures varying from room temperature to 400 degrees C by bipolar pulse ane RF magnetron co-sputtering deposition technique. After deposition, the films were annealed in a nitrogen atmosphere by rapid photothermal annealing at 1050 degrees C for 3 minutes. This thermal step allows the formation of the silicon quantum dots.

[Research on the phase and optical properties of nc-Si films prepared by low temperature aluminum induced crystallization].

In the present paper, nanocrystalline silicon thin films on glass substrates were prepared by rapid thermal annealing (RTA) of RF magnetron sputtered system and alpha-Si/Al films at a low temperature in Nz atmosphere. Optical metallographic microscope, confocal optical microscopy, X-ray diffractometer, Raman scattering and UV-Vis-NIR spectrometers were used to characterize the surface morphology and the phase and optical properties of nc-Si films. The influence of annealing process on the nc-Si films properties was studied.