High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-InSe nanosheet photodetectors.

Photoconductivities (PCs) with high responsivity in two-dimensional (2D) diindium triselenide (InSe) nanostructures with α-phase hexagonal structure were studied. The InSe nanosheet photodetectors fabricated by focused-ion beam technique exhibit broad spectral response with wavelength range from 300 nm to 1000 nm. The InSe nanosheets achieve optimal responsivity of 720 A W in near-infrared region (808 nm), and detectivity of 2.

Ultraefficient Ultraviolet and Visible Light Sensing and Ohmic Contacts in High-Mobility InSe Nanoflake Photodetectors Fabricated by the Focused Ion Beam Technique.

A photodetector using a two-dimensional (2D) low-direct band gap indium selenide (InSe) nanostructure fabricated by the focused ion beam (FIB) technique has been investigated. The FIB-fabricated InSe photodetectors with a low contact resistance exhibit record high responsivity and detectivity to the ultraviolet and visible lights. The optimal responsivity and detectivity up to 1.

The study of optical band edge property of bismuth oxide nanowires α-Bi2O3.

The α-phase Bi(2)O(3) (α-Bi(2)O(3)) is a crucial and potential visiblelight photocatalyst material needless of intentional doping on accommodating band gap. The understanding on fundamental optical property of α-Bi(2)O(3) is important for its extended applications. In this study, bismuth oxide nanowires with diameters from tens to hundreds nm have been grown by vapor transport method driven with vapor-liquid-solid mechanism on Si substrate.