Large-area epitaxial growth of MoSe via an incandescent molybdenum source.

We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe thin films. The as-grown MoSe thin films were characterized using transmission electron microscopy, energy dispersive x-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence (PL), reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm was identified.