E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology.

AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 °C.

The microsurgical treatment for primary hypertensive brainstem hemorrhage: Experience with 52 patients.

Objective: This study aims to investigate the effect of minimal invasive microsurgery in treating primary hypertensive brainstem hemorrhage (PHBH).

Methods: 52 patients of PHBH (≥3.5 ml) who have taken the minimal invasive microsurgery with neuronavigation guidance were included between Jan.

[Cloning, expression and bioinformatics analysis of cathepsin B of Echinococcus granulosus].

Objective: To clone and express cathepsin B gene of Echinococcus granulosus (EgCatB) and analyze EgCatB protein by using bioinformatics tools and online databases.

Methods: The total RNA of E. granulosus was extracted and reversely transcribed into cDNA as the template sequence for PCR.

[Analysis of the parental origin of MECP2 mutations in patients with Rett syndrome].

Objective: To identify the parental origin of methyl-CpG-binding protein 2 (MECP2) gene mutations in Chinese patients with Rett syndrome.

Methods: Single nucleotide polymorphisms (SNPs) in intron 3 of the MECP2 gene were analyzed by PCR and sequencing in 115 patients with Rett syndrome. Then sequencing of the SNP region was performed for the fathers of the patients who had at least one SNP, to determine which allele was from the father.