Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition.

This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin GaAs barrier layers was accompanied by a red-shift of the photoluminescence peak of InAs/GaAs heterostructures.

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering.

The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 10 cm are formed. The technique of controlled doping of InAs/GaAs nanostructures using a SnTe solid-state source was proposed.