Guest-cage atomic interactions in a clathrate-based phase-change material.

New clathrate-based phase-change materials with cage-like structures incorporating Cs and Ba guest atoms, are reported as a means of altering crystallization and amorphization behavior by controlling 'guest-cage' interactions via intra-complex guest vibrational effects. Both a high resistance to spontaneous crystallization, and long retention of the amorphous phase are achieved, as well as a low melting energy. This approach provides a route for achieving cage-controlled semiconductor devices.

Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials.

The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition.