Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range.

In recent years, researchers have placed great importance on the use of silicon (Si)-related materials as efficient light sources for the purpose of realizing Si-based monolithic optoelectronic integration. Previous works were mostly focused on Si nanostructured materials, and, so far, exciting results from Si-based compounds are still lacking. In this paper, we have systematically demonstrated the high photoluminescence external quantum efficiency (PL EQE) and internal quantum efficiency (PL IQE) of amorphous silicon oxynitride (a-SiNO) systems.

A comparative study of interfacial thermal conductance between metal and semiconductor.

To understand and control thermal conductance of interface between metal and semiconductor has now become a crucial task for the thermal design and management of nano-electronic and micro-electronic devices. The interfacial alignments and electronic characteristics of the interfaces between metal and semiconductor are studied using a first-principles calculation based on hybrid density functional theory. The thermal conductance of interfaces between metal and semiconductor were calculated and analyzed using diffuse mismatch model, acoustic mismatch model and nonequilibrium molecular dynamics methods.

High photoluminescence quantum yields generated from N-Si-O bonding states in amorphous silicon oxynitride films: erratum.

We present an erratum to our paper [Opt. Express2631617 (2018)10.1364/OE.

Synthesis of Fullerenes from a Nonaromatic Chloroform through a Newly Developed Ultrahigh-Temperature Flash Vacuum Pyrolysis Apparatus.

The flash vacuum pyrolysis (FVP) technique is useful for preparing curved polycyclic aromatic compounds (PAHs) and caged nanocarbon molecules, such as the well-known corannulene and fullerene C. However, the operating temperature of the traditional FVP apparatus is limited to ~1250 °C, which is not sufficient to overcome the high energy barriers of some reactions. Herein, we report an ultrahigh-temperature FVP (UT-FVP) apparatus with a controllable operating temperature of up to 2500 °C to synthesize fullerene C from a nonaromatic single carbon reactant, i.

Effects of annealing atmosphere on the performance of Cu(InGa)Se films sputtered from quaternary targets.

Quaternary sputtering without additional selenization is a low-cost alternative method for the preparation of Cu(InGa)Se (CIGS) thin film for photovoltaics. However, without selenization, the device efficiency is much lower than that with selenization. To comprehensively examine this problem, we compared the morphologies, depth profiles, compositions, electrical properties and recombination mechanism of the absorbers fabricated with and without additional selenization.

High photoluminescence quantum yields generated from N-Si-O bonding states in amorphous silicon oxynitride films.

We investigated the high absolute photoluminescence quantum yields (PL QYs) from tunable luminescent amorphous silicon oxynitride (a-SiNO) films. The PL QY of 8.38 percent has been achieved at PL peak energy of 2.

A technique for periorbital syringomas: intralesional radiofrequency ablation.

Aim: To evaluate the efficacy of intralesional radiofrequency ablation in the treatment of periorbital syringomas.

Methods: We tried the intralesional radiofrequency ablation for 64 patients with periorbital syringomas from 2007 to 2011. The operation was performed under 2.