Polarized light has promising applications in biological inspections, displays, and precise measurements. Direct emission of polarized light from a semiconductor device is highly desired in order to reduce the size and energy-consumption of the whole system. In this study, we demonstrate a semipolar GaN-based microcavity light-emitting diode (MCLED) that could simultaneously produce green light with perpendicular and parallel polarizations to the -axis.
View Article and Find Full Text PDFFlexible optoelectronic platforms, which integrate optoelectronic devices on a flexible substrate, are promising in more complex working environments benefiting from the mechanical flexibility. Herein, for the first time to the best of our knowledge, a flexible GaN-based vertical cavity surface-emitting laser (VCSEL) in the ultraviolet A (UVA) range was demonstrated by using a thin-film transfer process based on laser lift-off (LLO) and spin-coating of a flexible substrate. The lasing wavelength is 376.
View Article and Find Full Text PDFGaO-based Ultraviolet-C photodetector (UVCPD) is considered the most promising UVCPD at present and is divided into Metal-Semiconductor-Metal (MSM) and PN junction types. Compared with MSM-PDs, PN-PDs exhibit superior transient performance due to the built-in electric field. However, current GaO-based PN-PDs lack consideration for carrier collection and electric field distribution.
View Article and Find Full Text PDFRoom temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.
View Article and Find Full Text PDFIndium tin oxide (ITO) is often used as a current spreading layer in the GaN-based vertical-cavity surface-emitting lasers (VCSELs). However, the absorption coefficient of ITO is significant, which reduces the laser output power, raises the threshold, and makes VCSELs hardly lase in the ultraviolet range. To find a transparent conductive structure that can replace ITO, we propose a periodic p-AlGaN/u-GaN/p-GaN structure.
View Article and Find Full Text PDFFlexible optoelectronics is a technique for fabricating optoelectronic devices on a flexible substrate. Compared with conventional devices, flexible optoelectronic devices can be used in more complex working environments benefiting from the mechanical flexibility. Herein, for the first time to the best of our knowledge, a flexible GaN-based microdisk laser on a polyethylene terephthalate (PET) substrate in the ultraviolet A (UVA) range was demonstrated by using thin film transfer process based on laser lift-off (LLO).
View Article and Find Full Text PDFRecently, inorganic halide perovskites, especially CsPbBr, have been attracting attention because of their high efficiency, wide color gamut, and narrow luminescent spectrum. To elevate the perovskite devices' performance, optimizations of crystalline quality, device structures, and fabrication process are essential. Currently, the state-of-the-art fabrication approach of CsPbBr is spin-coating in an inert environment (nitrogen, argon, etc.
View Article and Find Full Text PDFBased on the intramolecular energy transfer mechanism between organic ligand TMHD (2, 2, 6, 6-tetramethyl-3, 5-heptanedione) and central Er ions, optical gains at 1.55 µm were demonstrated in three structures of polymer waveguides using complex Er(TMHD)-doped polymethylmethacrylate (PMMA) as the active material. With the excitation of two low-power UV light-emitting diodes (LEDs) instead of 980 or 1480 nm lasers, relative gains of 3.
View Article and Find Full Text PDFBased on the molecular energy transfer mechanism, relative gains at 1067 and 637 nm wavelengths are achieved in thermally activated delayed fluorescence molecule AQ(PhDPA) and Nd complex with chelating phosphine oxide as ligands codoped polymer waveguides, with the excitation of low-power UV light-emitting diodes (LEDs) instead of traditional semiconductor lasers as pump sources. For AQ(PhDPA) -Nd(DBTTA) (DBFDPO) (DBTTA = dibenzotetrathienoacene, DBFDPO = 4,6-bis (diphenylphosphoryl) dibenzofuran) -codoped polymethylmethacrylate (PMMA), and AQ(PhDPA) -Nd(DBTTA) (FDPO) (FDPO = 9,9-bis (diphenylphosphorylphenyl) fluorene)-codoped PMMA polymers with a mass ratio of 1:4 respectively, when they are spin-coated as upper claddings, the relative gains of 2.2 and 1.
View Article and Find Full Text PDFChelate phosphine oxide ligand (9,9-dimethyl-9H-xanthene-4,5-diyl) bis (diphenylphosphineoxide) (XPO) is prepared as a neutral ligand to synthesize complex Nd (TTA) (XPO) (TTA = 2-thenoyltrifluoroacetone). An appropriate energy gap between the XPO and TTA ligands, which can support two additional energy transfer routines from the first excited triplet state (T ) energy level of the XPO to that of the TTA, improves energy transfer in the Nd complex. Based on intramolecular energy transfer mechanism, optical gains at 1.
View Article and Find Full Text PDFIn this Letter, GaN-based green resonant-cavity light-emitting diodes (RCLEDs) with a low-cost aluminum (Al) metal bottom mirror, a dielectric top mirror, and a copper (Cu) supporting plate were fabricated. The green-emitting epitaxial wafer was grown on a patterned sapphire substrate (PSS) to ensure high crystal quality (CQ). Laser lift-off (LLO) of the PSS and electrical plating of a Cu supporting plate were then carried out to realize the vertical device structure.
View Article and Find Full Text PDFSince the emerging development of CsPbBr perovskite, chemical vapor deposition (CVD) has become one of the most promising fabrication techniques by which to precisely deposit uniform perovskite thin films. However, there have been few reports on the growth dynamics and chemical reaction parameters (, activation energy) for perovskite CVD. In this work, different deposition rates of CVD-grown CsPbBr thin films were obtained at different substrate temperatures.
View Article and Find Full Text PDFA 980 nm semiconductor laser is always selected as the pump source for erbium-ytterbium co-doped optical waveguide amplifiers. In this work, two low-cost blue-violet LEDs, rather than an expensive 980 nm laser, were used to pump an Er-Yb co-doped phosphate planar waveguide. When the signal power was 0.
View Article and Find Full Text PDFIII-nitrides based microdisks with the mushroom-type shape are key components for integrated nanophotonic circuits. The air gap undercut in the mushroom-type microdisk is essential for maintaining vertical optical confinement, but this structure is still facing the difficulty of electrical injection. In this work, we demonstrate an electrically injected GaN-based microdisk of such structure.
View Article and Find Full Text PDFTwo-dimensional (2D) Ruddlesden-Popper perovskites with bulky organic cations have attracted extensive attention in light-emitting devices and photovoltaics due to their robust environment stability, tunable luminescent color, strong exciton binding and promising efficiency. A quantum well (QW) structure is spontaneously formed by sandwiching PbBr4 layers into bulky organic cations. However, some intrinsic excitonic mechanisms in these materials still need to be elucidated.
View Article and Find Full Text PDFSemiconductor vertical-cavity surface-emitting lasers (VCSELs) with wavelengths from 491.8 to 565.7 nm, covering most of the 'green gap', are demonstrated.
View Article and Find Full Text PDFLow threshold continuous-wave (CW) lasing of current injected InGaN quantum dot (QD) vertical-cavity surface-emitting lasers (VCSELs) was achieved at room temperature. The VCSEL was fabricated by metal bonding technique on a copper substrate to improve the heat dissipation ability of the device. For the first time, lasing was obtained at yellow-green wavelength of 560.
View Article and Find Full Text PDFNanoscale Res Lett
October 2012
Photoluminescence (PL) spectra were measured as a function of well width (LW) and temperature in ZnO/Mg0.1Zn0.9O single quantum wells (QWs) with graded thickness.
View Article and Find Full Text PDFGaN-based light emitting diodes (LEDs) fabricated on sapphire substrates were successfully transferred onto silicon substrates using a double-transfer technique. Compared with the conventional LEDs on sapphire, the transferred LEDs showed a significant improvement in the light extraction and thermal dissipation, which should be mainly attributed to the removal of sapphire and the good thermal conductivity of silicon substrate. Benefited from the optimized wafer bonding process, the transfer processes had a negligible influence on electrical characteristics of the transferred LEDs.
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