Multifunctional Integrated Interdigital Microsupercapacitors and Self-Powered Iontronic Tactile Pressure Sensor for Wearable Electronics.

Multifunctionality and self-powering are key technologies for next-generation wearable electronics. Herein, an interdigitated MXene/TiS-based self-powered intelligent pseudocapacitive iontronic sensor system is designed, realizing integration of energy storage and pressure-sensitive sensing function into one device. The intercalation of TiS nanosheet can effectively prevent self-stacking of MXene and results in mesoporous cross-linked framework, therefore exposing more active sites and broadening the electron/ion transport channels.

High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated InO channel layers.

Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials. To demonstrate the potential applications of GQDs in electronic devices, this work presents solution-processed high performance GQD-decorated InO thin-film transistors (TFTs) based on ZrO as gate dielectrics. GQDs-InO/ZrO TFTs with optimized doping content have demonstrated high electrical performance and low operating voltage, including a larger field-effect mobility ( ) of 34.

MXene/Silver Nanowire-Based Spring Frameworks for Highly Flexible Waterproof Supercapacitors and Piezoelectrochemical-Type Pressure-Sensitive Sensor Devices.

With widespread application of flexible electronic devices, the multifunction for supercapacitors has attracted tremendous attention. Here, developed is a novel multifunctional MXene-based pizeoelectrochemical-type pressure sensor based on highly compressible antiwater supercapacitor. This novel design realizes energy storage and pressure sensing functions simultaneously.

Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits.

Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO) channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) flexible device applications. Herein, an ultraviolet-assisted oxygen ambient rapid thermal annealing method (UV-ORTA), which combines ultraviolet irradiation with rapid annealing treatment in an oxygen atmosphere, was proposed to realize the achievement of high-performance α-IGZO TFTs at low temperature. Experimental results have confirmed that UV-ORTA treatment has the ability to suppress defects and obtain high-quality films similar to high-temperature-annealing-treated samples.