This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.
View Article and Find Full Text PDFA new methodology for using scanning picosecond laser microscopy to simulate cosmic ray induced radiation effects as a function of temperature is described in detail. The built system is centered on diffraction-limited focusing of the output from a broadband (690-960 nm) ultrafast Ti:sapphire Tsunami laser pumped by a 532 nm Millennia laser. An acousto-optic modulator is used to provide pulse picking down to event rates necessary for the technologies and effects under study.
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