Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.
View Article and Find Full Text PDFIII-nitrides based microdisks with the mushroom-type shape are key components for integrated nanophotonic circuits. The air gap undercut in the mushroom-type microdisk is essential for maintaining vertical optical confinement, but this structure is still facing the difficulty of electrical injection. In this work, we demonstrate an electrically injected GaN-based microdisk of such structure.
View Article and Find Full Text PDFSemiconductor vertical-cavity surface-emitting lasers (VCSELs) with wavelengths from 491.8 to 565.7 nm, covering most of the 'green gap', are demonstrated.
View Article and Find Full Text PDFZhongguo Shi Yan Xue Ye Xue Za Zhi
October 2014
Zhongguo Shi Yan Xue Ye Xue Za Zhi
June 2013
This study was purposed to investigate the therapeutic effects of early transfusion of immunized donor lymphocytes after haploidentical transplantation by means of mouse model of nonmyeloablative haploidentical bone marrow transplantation. CB6F1 female mouse was served as recipient and C57BL/6 male mouse was served as donor. Each CB6F1 female mouse was subjected to intravenous transfusion with 1×10(6) erythroleukemia (EL9611) cells at day 4 before transplantation, followed with intraperitoneal injection of Ara-C (0.
View Article and Find Full Text PDFNanoscale Res Lett
October 2012
Photoluminescence (PL) spectra were measured as a function of well width (LW) and temperature in ZnO/Mg0.1Zn0.9O single quantum wells (QWs) with graded thickness.
View Article and Find Full Text PDFGaN-based light emitting diodes (LEDs) fabricated on sapphire substrates were successfully transferred onto silicon substrates using a double-transfer technique. Compared with the conventional LEDs on sapphire, the transferred LEDs showed a significant improvement in the light extraction and thermal dissipation, which should be mainly attributed to the removal of sapphire and the good thermal conductivity of silicon substrate. Benefited from the optimized wafer bonding process, the transfer processes had a negligible influence on electrical characteristics of the transferred LEDs.
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