A double-sided, single-chip integration scheme using through-silicon-via for neural sensing applications.

We present a new double-sided, single-chip monolithic integration scheme to integrate the CMOS circuits and MEMS structures by using through-silicon-via (TSV). Neural sensing applications were chosen as the implementation example. The proposed heterogeneous device integrates standard 0.

2.5D heterogeneously integrated microsystem for high-density neural sensing applications.

Heterogeneously integrated and miniaturized neural sensing microsystems are crucial for brain function investigation. In this paper, a 2.5D heterogeneously integrated bio-sensing microsystem with μ-probes and embedded through-silicon-via (TSVs) is presented for high-density neural sensing applications.