Gatemon Qubit on a Germanium Quantum-Well Heterostructure.

Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an aluminum microwave circuit on a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to the superconducting proximity effect, the high-mobility two-dimensional hole gas confined in this well provides a gate-tunable superconducting weak link between two Al contacts.

The Schottky barrier transistor in emerging electronic devices.

This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics.

A gate-tunable graphene Josephson parametric amplifier.

With a large portfolio of elemental quantum components, superconducting quantum circuits have contributed to advances in microwave quantum optics. Of these elements, quantum-limited parametric amplifiers are essential for low noise readout of quantum systems whose energy range is intrinsically low (tens of μeV). They are also used to generate non-classical states of light that can be a resource for quantum enhanced detection.

Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers.

Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve the realization of topological superconducting systems as well as gate-tunable superconducting quantum bits. Here, we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs).

Electric field-controlled rippling of graphene.

Metal-graphene interfaces generated by electrode deposition induce barriers or potential modulations influencing the electronic transport properties of graphene based devices. However, their impact on the local mechanical properties of graphene is much less studied. Here we show that graphene near a metallic interface can exhibit a set of ripples self-organized into domains whose topographic roughness is controlled by the tip bias of a scanning tunneling microscope.

Superconducting quantum interference devices based set-up for probing current noise and correlations in three-terminal devices.

We have implemented a new experimental set-up for precise measurements of current fluctuations in three-terminal devices. The system operates at very low temperatures (30 mK) and is equipped with three superconducting quantum interference devices (SQUIDs) as low noise current amplifiers. A SQUID input coil is connected to each terminal of a sample allowing the acquisition of time-dependent current everywhere in the circuit.

Noise correlations in three-terminal diffusive superconductor-normal-metal-superconductor nanostructures.

We present measurements of current noise and cross correlations in three-terminal superconductor-normal-metal-superconductor (S-N-S) nanostructures that are potential solid-state entanglers thanks to Andreev reflections at the N-S interfaces. The noise-correlation measurements spanned from the regime where electron-electron interactions are relevant to the regime of incoherent multiple Andreev reflection. In the latter regime, negative cross correlations are observed in samples with closely spaced junctions.

Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon.

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals by a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here, we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductor-semiconductor devices, such as resonant supercurrent transistors, when the quantum dot is strongly coupled to the electrodes.

Cross correlation of incoherent multiple Andreev reflections.

We use a semiclassical theory to calculate the current correlations in a multiterminal structure composed of a normal metallic dot connected to all superconducting leads at arbitrary voltage and temperature. This theory holds when the proximity effect is suppressed in the dot. At low voltage, eV< View Article and Find Full Text PDF

Related effects of cell adaptation to serum-free conditions on murine EPO production and glycosylation by CHO cells.

The necessity to perform serum-free cultures to produce recombinant glycoproteins generally requires an adaptation procedure of the cell line to new environmental conditions, which may therefore induce quantitative and qualitative effects on the product, particularly on its glycosylation. In previous studies, desialylation of EPO produced by CHO cells was shown to be dependent on the presence of serum in the medium. In this paper, to discriminate between the effects of the adaptation procedure to serum-free medium and the effects of the absence of serum on EPO production and glycosylation, adapted and non-adapted CHO cells were grown in serum-free and serum-containing media.

Divergence at low bias and down-mixing of the current noise in a diffusive superconductor-normal-metal-superconductor junction.

We present current noise measurements in a long diffusive superconductor-normal-metal-superconductor junction in the low voltage regime, in which transport can be partially described in terms of coherent multiple Andreev reflections. We show that, when decreasing voltage, the current noise exhibits a strong divergence together with a broad peak. We ascribe this peak to the mixing between the ac-Josephson current and the noise of the junction itself.

Half-integer Shapiro steps at the 0-pi crossover of a ferromagnetic Josephson junction.

We investigate the current-phase relation of S/F/S junctions near the crossover between the 0 and the pi ground states. We use Nb/CuNi/Nb junctions where this crossover is driven both by thickness and temperature. For a certain thickness a nonzero minimum of critical current is observed at the crossover temperature.

Doubled full shot noise in quantum coherent superconductor-semiconductor junctions.

We performed low temperature shot noise measurements in superconductor (TiN) strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the conductance has a maximum due to coherent multiple Andreev reflections at low energy and that the shot noise is then twice the Poisson noise (S = 4eI). When the subgap conductance reaches its minimum at finite voltage the shot noise changes to the normal value (S = 2eI) due to a large quasiparticle contribution.