Two-dimensional transition metal dichalcogenides (TMDs) are promising materials for semiconductor nanodevices owing to their flexibility, transparency, and appropriate band gaps. A variety of optoelectronic and electronic devices based on TMDs diodes have been extensively investigated due to their unique advantages. However, improving their performance is challenging for commercial applications.
View Article and Find Full Text PDFOwing to their practical applications, two-dimensional semiconductor p-n diodes have attracted enormous attention. Over the past decade, various methods, such as chemical doping, heterojunction structures, and metallization using metals with different work functions, have been reported for fabrication of such devices. In this study, a lateral p-n junction diode is formed in tungsten diselenide (WSe ) using a combination of edge and surface contacts.
View Article and Find Full Text PDFThe integration of electrical contact into 2D heterostructure is an essential approach to high-quality electronic nano-devices, especially field-effect transistors. However, high contact resistance with transition metal dichalcogenides such as molybdenum disulphide (MoS)-based devices has been a significant fabrication impediment to their potential applications. Here, we have demonstrated the advantage of 1D indium metal contact with fully encapsulated MoSwithin hexagonal boron nitride.
View Article and Find Full Text PDFA core-shell cerium oxide nanorod@polypyrrole (CeO-NR@Ppy) nanocomposite-based electrochemical DNA biosensor was studied for Salmonella detection. The core-shell CeO-NR@Ppy nanocomposite was prepared by in situ chemical oxidative polymerization of pyrrole monomer on CeO-NRs, which provided a suitable platform for electrochemical DNA biosensor fabrication. The immobilization of ss-DNA sequences onto nanocomposite-coated microelectrode was performed via covalent attachment method.
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