A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and GaO Semiconductors: Modelling and Performance Analysis.

In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, which is developed utilizing both silicon (Si) and gallium trioxide (GaO) devices. The hybridization of semiconductor devices is performed since the production volume and fabrication of ultra-wide bandgap (UWBG) semiconductors are still in the early-stage, and they are highly expensive. In the proposed ANPC topology, the Si devices are operated at a low switching frequency, while the GaO switches are operated at a higher switching frequency.