Boron carbide in its rhombohedral form (r-BC), commonly denoted BC or BC, is a well-known hard material, but it is also a potential semiconductor material. We deposited r-BC by chemical vapor deposition between 1100 °C and 1500 °C from triethylboron in H on 4H-SiC(0001) and 4H-SiC(0001̄). We show, using ToF-ERDA, that pure BC was grown at 1300 °C, furthermore, using XRD that graphite forms above 1400 °C.
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