Publications by authors named "Laurent Souqui"
Article Synopsis
- - The study focuses on rhombohedral boron carbide (r-BC) as a promising material for optoelectronic and thermoelectric applications, specifically examining its growth on different faces of 4H-SiC substrates using chemical vapor deposition (CVD).
- - Researchers investigated the film-substrate interface to understand why epitaxial growth of r-BC occurs exclusively on the C-face of the substrate, using advanced techniques like high-resolution transmission electron microscopy and electron energy loss spectroscopy.
- - Findings suggest that the absence of surface roughness or carbon interlayer on both substrate types points to surface carbon accumulation as a barrier to continued epitaxial r-BC growth, as indicated by Raman spectroscopy analysis.
Boron carbide in its rhombohedral form (r-BC), commonly denoted BC or BC, is a well-known hard material, but it is also a potential semiconductor material. We deposited r-BC by chemical vapor deposition between 1100 °C and 1500 °C from triethylboron in H on 4H-SiC(0001) and 4H-SiC(0001̄). We show, using ToF-ERDA, that pure BC was grown at 1300 °C, furthermore, using XRD that graphite forms above 1400 °C.
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