Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET.

In this work, we studied the effect of high-pressure deuterium annealing (HPDA) on a p-type omega-gate nanowire field effect transistor by random telegraph noise (RTN) signal analysis. After HPDA under conditions of 400 °C and 10 atm for 30 min, I decreases by 41.2% and I increases by up to 5.