Assessing dead time effects when attempting isotope ratio quantification by time-of-flight secondary ion mass spectrometry.

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a quasi-non-destructive technique capable of analyzing the outer monolayers of a solid sample and detecting all elements of the periodic table and their isotopes. Its ability to analyze the outer monolayers resides in sputtering the sample surface with a low-dose primary ion gun, which, in turn, imposes the use of a detector capable of counting a single ion at a time. Consequently, the detector saturates when more than one ion arrives at the same time hindering the use of TOF-SIMS for quantification purposes such as isotope ratio estimation.