A major issue in low voltage lithography is surface charging, which results in beam deflection presented as uneven exposure between adjacent structures. In this study, charge-induced pattern distortions in low-voltage energy beam lithography (LVEBL) were investigated using a silicide direct-write electron beam lithography process. Two methodologies have been proposed to avert charging effects in LVEBL, namely, pattern randomizing and lithography using the crossover voltage.
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