Investigation the CMP process of 6 H-SiC in HO solution with ReaxFF molecular dynamics simulation.

To observe the chemical mechanical polishing (CMP) process at the atomic scale, reactive force field molecular dynamics (ReaxFF-MD) was employed to simulate the polishing of 6 H-SiC under three conditions: dry, pure water, and HO solution. This study examined the reactants on the surface of 6 H-SiC during the reaction in the HO solution, along with the dissociation and adsorption processes of HO and water molecules. The mechanisms for atom removal during the CMP process were elucidated.

Fabrication and Polishing Performance of Diamond Self-Sharpening Gel Polishing Disk.

A diamond gel polishing disk with self-sharpening ability is proposed to solve the problem of glazing phenomenon in the gel polishing disks. Aluminum nitride (AlN) powder with silica sol film coating (A/S powder) is added to the polishing disk, and a specific solution is used to dissolve the A/S powder during polishing, forming a pore structure on the polishing disk. To realize the self-sharpening process, the dissolution property of the A/S powder is analyzed.