Cryogenic lithium-niobate-on-insulator optical filter.

Photonic integrated circuits have garnered significant attention and experienced rapid development in recent years. To provide fundamental building blocks for scalable optical classical and quantum information processing, one important direction is to develop cryogenic compatible photonic integrated devices. Here, we prepare one optical filter on a lithium-niobate-on-insulator (LNOI) platform based on a multimode waveguide grating and verify its availability at temperature from 295 to 7 K.

Ultra-broadband TM-pass polarizer based on anisotropic metamaterials in lithium niobate on an insulator.

An ultra-broadband TM-pass polarizer is designed, fabricated, and experimentally demonstrated based on subwavelength grating (SWG) metamaterials in a lithium niobate on an insulator (LNOI) platform. According to our simulation, the designed device is predicted to work at a 220 nm wavelength range from 1460 to 1680 nm, covering the S-, C-, L-, U-bands of optical fiber communication. By depositing and subsequently etching a silicon nitride thin film atop the LNOI chip, the SWG structures are formed successfully by using complementary metal-oxide semiconductor (CMOS)-compatible fabrication processes.

Transverse Mode-Encoded Quantum Gate on a Silicon Photonic Chip.

As an important degree of freedom (d.o.f.

Topologically Protected Valley-Dependent Quantum Photonic Circuits.

Topological photonics has been introduced as a powerful platform for integrated optics, since it can deal with robust light transport, and be further extended to the quantum world. Strikingly, valley-contrasting physics in topological photonic structures contributes to valley-related edge states, their unidirectional coupling, and even valley-dependent wave division in topological junctions. Here, we design and fabricate nanophotonic topological harpoon-shaped beam splitters (HSBSs) based on 120-deg-bending interfaces and demonstrate the first on-chip valley-dependent quantum information process.

Supercompact Photonic Quantum Logic Gate on a Silicon Chip.

To build universal quantum computers, an essential step is to realize the so-called controlled-NOT (CNOT) gate. Quantum photonic integrated circuits are well recognized as an attractive technology offering great promise for achieving large-scale quantum information processing, due to the potential for high fidelity, high efficiency, and compact footprints. Here, we demonstrate a supercompact integrated quantum CNOT gate on silicon by using the concept of symmetry breaking of a six-channel waveguide superlattice.

A Biaxial Strain Sensor Using a Single MoS Grating.

In this paper, we report a new type of MoS-based grating sensor for in-plane biaxial strain gauges with a precision limit of ~ 1‰. The MoS grating is numerically simulated with different biaxial strains up to 5%. Our first-principles calculations reveal that the strain sensitivity of the MoS reflectance spectrum can be considered an additional strain sensor integrated with the grating structure, enabling the mapping of in-plane biaxial strains.

Radial Nanowire Assemblies under Rotating Magnetic Field Enabled Efficient Charge Separation.

Developing efficient charge separation strategies is essential to achieve high-power conversion efficiency in the fields of chemistry, biology, and material science. Herein, we develop a facile strategy for fabrication of unique wafer-scale radial nanowire assemblies by exploiting shear force in rotary solution. The assembly mechanism can be well revealed by the large-scale stochastic dynamics simulation.

Excitation and analyzation of different surface plasmon modes on a suspended Ag nanowire.

Silver nanowires (AgNWs), as one of the most important plasmonic waveguides, can support several different plasmonic modes. These surface plasmon polariton (SPP) modes have different electric field distributions, effective mode areas, propagation lengths and losses and thus can be used for different applications, from efficiently collecting single photons to carrying quantum entanglement. Therefore, the excitation and analysis of these different SPP modes are of pivotal importance for the development of subwavelength optical devices.

Generation of multiphoton quantum states on silicon.

Multiphoton quantum states play a critical role in emerging quantum technologies and greatly improve our fundamental understanding of the quantum world. Integrated photonics is well recognized as an attractive technology offering great promise for the generation of photonic quantum states with high-brightness, tunability, stability, and scalability. Herein, we demonstrate the generation of multiphoton quantum states using a single-silicon nanophotonic waveguide.

On-chip coherent conversion of photonic quantum entanglement between different degrees of freedom.

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip.