Electroplated Copper Additives for Advanced Packaging: A Review.

Acid copper electroplating stands as a core technology in advanced packaging processes, facilitating the realization of metal interconnects, bumps, vias, and substrate wiring between transistors. The deposition quality of copper interconnect materials has a crucial impact on the final performance of chips, directly influencing their yield, reliability, and stability. In this intricate process, additives play a pivotal role in regulating the deposition quality and behavior of metal copper.

Influence of PUB2 on the Leveling Effect of Chip Copper Connection Electroplating: Mechanism and Applications.

The copper connectivity technique is essential for achieving electrical interconnection in wafer level packaging (WLP), system in packaging (SiP), and 3D packaging. The essential processing material for copper connectivity is a copper sulfate electroplating solution in which organic additives play a crucial role in the regularity of copper electrodeposition. In this study, electrochemical tests, X-ray diffraction, 3D profiling, and scanning electron microscopy were used to investigate the leveling effect and mechanism of polyquaternary ammonium urea-containing polymer (PUB2) in the process of copper electrodeposition on-chip copper connections.

Role of Additives: Modified Hemihydrate Phosphogypsum Morphology and Enhanced Filtration Performance of Wet-Process Phosphoric Acid.

The morphology of hemihydrate phosphogypsum crystals is of vital importance in the hemihydrate-dihydrate (HH-DH) wet-process phosphoric acid production for high filtration strength. The morphology of hemihydrate phosphogypsum is commonly needlelike due to the strong acidic crystallization environment, which is unfavorable to the following filtration process. In this study, the crystal habit of hemihydrate phosphogypsum with a large aspect ratio was skillfully modified by additives to achieve a higher filtration strength.

Prediction and Effect Verification of Thiamine as a Leveling Agent in Chip Wafer Electroplating.

Thiamine, a nitrogen-containing heterocyclic compound, is explored for the first time as a novel leveling agent in this study. Based on the density functional theory (DFT) calculations and molecular dynamics (MD) simulations of the adsorption process of thiamine and the commonly used leveling agent JGB, the average values of the binding energies after equilibrium of thiamine and JGB are similar, which indicates that the thiamine molecules have strong bonding ability with the surface of copper and can be adsorbed tightly on the surface of copper. By cyclic voltammetry (CV) curve, thiamine was found to inhibit copper deposition and the inhibition effect was stronger than JGB.