Rapid, in Situ Neutralization of Nitrogen- and Silicon-Vacancy Centers in Diamond Using Above-Band Gap Optical Excitation.

The charge state of a quantum point defect in a solid-state host strongly determines its optical and spin characteristics. Consequently, techniques for controlling the charge state are required to realize technologies for quantum networking and sensing. In this work, we demonstrate the use of deep-ultraviolet (DUV) radiation to dynamically neutralize nitrogen- (NV) and silicon-vacancy (SiV) centers.