Shape-Dependent Multiexciton Emission and Whispering Gallery Modes in Supraparticles of CdSe/Multishell Quantum Dots.

Semiconductors are indispensable as the active light-emitting element in many optoelectronic devices. However, even the purest bulk semiconductors suffer from considerable nonradiative recombination leading to low photoluminescence efficiencies. Zero-dimensional quantum dots show a much better carrier-to-photon conversion caused by confinement of the excitons but suffer from nonradiative recombination when assembled into a solid, due to exciton energy transfer.

All-optical active switching in individual semiconductor nanowires.

The imminent limitations of electronic integrated circuits are stimulating intense activity in the area of nanophotonics for the development of on-chip optical components, and solutions incorporating direct-bandgap semiconductors are important in achieving this end. Optical processing of data at the nanometre scale is promising for circumventing these limitations, but requires the development of a toolbox of components including emitters, detectors, modulators, waveguides and switches. In comparison to components fabricated using top-down methods, semiconductor nanowires offer superior surface properties and stronger optical confinement.

One-dimensional polaritons with size-tunable and enhanced coupling strengths in semiconductor nanowires.

Strong coupling of light with excitons in direct bandgap semiconductors leads to the formation of composite photonic-electronic quasi-particles (polaritons), in which energy oscillates coherently between the photonic and excitonic states with the vacuum Rabi frequency. The light-matter coherence is maintained until the oscillator dephases or the photon escapes. Exciton-polariton formation has enabled the observation of Bose-Einstein condensation in the solid-state, low-threshold polariton lasing and is also useful for terahertz and slow-light applications.

ZnO nanowire lasers.

The pathway towards the realization of optical solid-state lasers was gradual and slow. After Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for the first solid state laser device to see the light. Not much later, the first semiconductor laser was demonstrated and lasing in the near UV spectral range from ZnO was reported as early as 1966.

Variable temperature spectroscopy of as-grown and passivated CdS nanowire optical waveguide cavities.

Semiconductor nanowire waveguide cavities hold promise for nanophotonic applications such as lasers, waveguides, switches, and sensors due to the tight optical confinement in these structures. However, to realize their full potential, high quality nanowires, whose emission at low temperatures is dominated by free exciton emission, need to be synthesized. In addition, a proper understanding of their complex optical properties, including light-matter coupling in these subwavelength structures, is required.

Propagation loss spectroscopy on single nanowire active waveguides.

A new technique is reported where by combining spatially and spectrally resolved scanning optical microscopy on single nanowire active waveguides, waveguide propagation loss and dispersion can be determined. The waveguide propagation loss spectra have been utilized to obtain insights into the optical absorption spectra of these unique nanostructured materials, which are modified in comparison to bulk materials. The propagation spectra and waveguide dispersion show clear signatures of electronic effects such as exciton-polariton formation.

Size-dependent waveguide dispersion in nanowire optical cavities: slowed light and dispersionless guiding.

Fundamental understanding of the size dependence of nanoscale optical confinement in semiconductor nanowire waveguides, as expressed by changes in the dispersion of light, is crucial for the optimal design of nanophotonic devices. Measurements of the dispersion are particularly challenging for nanoscale cavities due to difficulties associated with the in- and out-coupling of light resulting from diffraction effects. We report the strong size dependence of optical dispersion and associated group velocities in subwavelength width ZnSe nanowire waveguide cavities, using a technique based on Fabry-Perot resonator modes as probes over a wide energy range.

Manipulating metal-oxide nanowires using counter-propagating optical line tweezers.

Semiconducting nanowires, such as ZnO and Si, are used in the fields of nanophotonics and nanoelectronics. Optical tweezers offer the promise of flexible positional control of such particles in a liquid, but so far this has been limited to either manipulation close to the surface, or to axial trapping of nanowires. We show the three-dimensional trapping of ZnO and silica-coated Si nanowires in counter-propagating line tweezers, and demonstrate translational and rotational in-plane manipulation, away from the surfaces.

Phase-correlated nondirectional laser emission from the end facets of a ZnO nanowire.

We investigated the laser emission from individual ZnO nanowires and observed an interference pattern due to coherent laser emission from the wire end facets. Comparison with numerical simulations shows that the laser light is emitted nearly spherically from the wire ends. The energy spacing between sharp lasing modes scales with the inverse length of the nanowire; thus, laser emission peaks correspond to Fabry-Pérot modes of the nanowire cavity.

Exciton polaritons confined in a ZnO nanowire cavity.

Semiconductor nanowires of high purity and crystallinity hold promise as building blocks for miniaturized optoelectrical devices. Using scanning-excitation single-wire emission spectroscopy, with either a laser or an electron beam as a spatially resolved excitation source, we observe standing-wave exciton polaritons in ZnO nanowires at room temperature. The Rabi splitting between the polariton branches is more than 100 meV.

Increase of the photoluminescence intensity of InP nanowires by photoassisted surface passivation.

As-grown single-crystal InP nanowires, covered with a surface oxide, show a photoluminescence efficiency that strongly varies from wire to wire. We show that the luminescence efficiency of single-crystal InP nanowires can be improved by photoassisted wet chemical etching in a butanol solution containing HF and the indium-coordinating ligand trioctylphosphine oxide. Electron-hole photogeneration, electron scavenging, and oxidative dissolution combined with surface passivation by the indium-coordinating ligand are essential elements to improve the luminescence efficiency.