Growth Mechanism, Ambient Stability, and Charge Trapping Ability of Ti-Based Maleic Acid Hybrid Films by Molecular Layer Deposition.

Ti-based maleic acid (MA) hybrid films were successfully fabricated by molecular layer deposition (MLD) using organic precursor MA and inorganic precursor TiCl. The effect of deposition temperature on the growth rate, composition, and bonding mode of hybrid thin films has been investigated systematically. With increasing temperature from 140 to 280 °C, the growth rate decreases from 1.

Bipolar Resistive Switching Characteristics of HfO/TiO/HfO Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition.

The HfO/TiO/HfO trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trilayer-structure units has been investigated. Both Pt/HfO/TiO/HfO/Pt and Pt/HfO/TiO/HfO/TiN exhibit typical bipolar resistive switching behavior.

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt Nanocrystals for Resistive Random Access Memory Applications.

AlO- or HfO-based nanocomposite structures with embedded CoPt nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPt NCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPt NCs, ALD-derived Pt/oxide/100 cycle-CoPt NCs/TiN/SiO/Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥10) of OFF/ON states, better switching endurance up to 10 cycles, and longer data retention over 10 s.

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO/ZnO/TiN Memristive System.

In this work, a kind of new memristor with the simple structure of Pt/HfO/ZnO/TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synaptic plasticity and learning behaviors of Pt/HfO/ZnO/TiN memristive system have been investigated deeply. Multilevel resistance states are obtained by varying the programming voltage amplitudes during the pulse cycling.

Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst.

Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The possible pathways for silicon dioxide (SiO2) ALD using silicon tetrachloride (SiCl4) and water (H2O) without a catalyst have been investigated by means of density functional theory calculations. The results show that the SiCl4 half-reaction is a rate-determining step of SiO2 ALD.

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.

We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing.

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2.

Plasma-enhanced atomic layer deposition (PE-ALD) has been applied to prepare high-quality ultrathin films for microelectronics, catalysis, and energy applications. The possible pathways for SiO2 PE-ALD using aminosilanes and O2 plasma have been investigated by density functional theory calculations. The silane half-reaction between SiH4 and surface -OH is very difficult and requires a high activation free energy of 57.

[Study on the synthesis of a new reagent 3-(4'-fluorophenyl)-5-(2'-arsenoxylphenylazo)-rhodanine and the fluoresence determination of bismuth(III)].

A new fluorescence reagent, 3-(4'-fluorophenyl)-5-(2'-arsenoxylphenylazo)-rhodanine, was synthesized. The structure of the reagent was clarified by elemental analysis and IR. At pH 5.