Sudden adiabaticity signals reentrant bulk superconductivity in UTe.

There has been a recent surge of interest in UTe due to its unconventional magnetic field ()-reinforced spin-triplet superconducting phases persisting at fields far above the simple Pauli limit for . Magnetic fields in excess of 35 T then induce a field-polarized magnetic state via a first-order-like phase transition. More controversially, for field orientations close to and above 40 T, electrical resistivity measurements suggest that a further superconducting state may exist.

Electronic landscape of the -electron intermetallics with the ThCrSi structure.

Although strongly correlated -electron systems are well known as reservoirs for quantum phenomena, a persistent challenge is to design specific states. What is often missing are simple ways to determine whether a given compound can be expected to exhibit certain behaviors and what tuning vector(s) would be useful to select the ground state. In this review, we address this question by aggregating information about Ce, Eu, Yb, and U compounds with the ThCrSi structure.

AnTAlSi (An = Ce, Th, U, Np; T = Ni, Co): Actinide Intermetallics with Disordered GdFeSi Structure Type Grown from Metal Flux.

AnTAlSi (An = Ce, Th, U, Np; T = Ni, Co) were synthesized in metal flux reactions carried out in aluminum/gallium melts. In previous work, UTAlSi (T = Co, Ni) analogues were formed by arc-melting U:T:Si and reacting this mixture in Al/Ga flux. However, in the current work, all compounds were synthesized by using AnO reactants, taking advantage of the ability of the aluminum in the flux to act as both solvent and reducing agent.

An ICT-based fluorescence enhancement probe for detection of Sn in cancer cells.

Development of a novel fluorescence enhancement probe for detection of Sn in organisms, with high selectivity and sensitivity, is of great interest but remains a great challenge. Herein, an ICT-based fluorescence probe TPPB was rationally developed to act as an 'enhancement' luminescent and "naked-eye" indicator for Sn detection. Importantly, spectroscopic studies indicated that TPPB was a fluorescence enhancement sensor for Sn with rapid response, low detection limit (0.

UTAlSi (T = Ni, Co): Complex Uranium Silicides Grown from Aluminum/Gallium Flux Mixtures.

Two new quaternary analogs of the GdFeSi structure type were grown from the reaction of uranium, silicon, and a transition metal (nickel or cobalt) in an excess of aluminum/gallium flux. The use of a mixed flux was found to be necessary for the formation of UTAlSi (T = Ni, Co). Single crystal X-ray diffraction data shows the presence of disordered U/Si layers that are characteristic of this structure type; precession photographs indicate partial formation of a superstructure and stacking disorder along the -axis.

Enhanced thermoelectric performance of heavy-fermion compounds Yb Zn ( = Co, Rh, Ir) at low temperatures.

Thermoelectricity allows direct conversion between heat and electricity, providing alternatives for green energy technologies. Despite these advantages, for most materials the energy conversion efficiency is limited by the tendency for the electrical and thermal conductivity to be proportional to each other and the Seebeck coefficient to be small. Here we report counter examples, where the heavy fermion compounds Yb Zn ( = Co, Rh, Ir) exhibit enhanced thermoelectric performance including a large power factor ( = 74 μW/cm-K; = Ir) and a high figure of merit ( = 0.

Zeeman-Induced Valley-Sensitive Photocurrent in Monolayer MoS_{2}.

The control of the valley degree of freedom lies at the core of interest in monolayer transition metal dichalcogenides, where specific valley-spin excitation can be created using circularly polarized light. Measurement and manipulation of the valley index has also been achieved, but mainly with purely optical methods. Here, in monolayer MoS_{2}, we identify a response to the valley polarization of excitons in the longitudinal electrical transport when the valley degeneracy is broken by an out-of-plane magnetic field B_{z}.

White light emitting device based on single-phase CdS quantum dots.

White light emitting diodes (WLEDs) based on quantum dots (QDs) are emerging as robust candidates for white light sources, however they are suffering from the problem of energy loss resulting from the re-absorption and self-absorption among the employed QDs of different peak wavelengths. It still remains a challenging task to construct WLEDs based on single-phase QD emitters. Here, CdS QDs with short synthesis times are introduced to the fabrication of WLEDs.

Quantum dot white light emitting diodes with high scotopic/photopic ratios.

Alloy core/shell CdZnS/ZnS quantum dots (QDs) are emerging as robust candidates for light-emitting diodes (LEDs), however the emission range of the current CdZnS/ZnS is quite limited, ranging from 390 to 470 nm. It still remains a challenging task to construct white LEDs based on current CdZnS/ZnS system. Here, a versatile ZnSe with a moderate band gap is introduced onto the CdZnS core.

Multiple hot-carrier collection in photo-excited graphene Moiré superlattices.

In conventional light-harvesting devices, the absorption of a single photon only excites one electron, which sets the standard limit of power-conversion efficiency, such as the Shockley-Queisser limit. In principle, generating and harnessing multiple carriers per absorbed photon can improve efficiency and possibly overcome this limit. We report the observation of multiple hot-carrier collection in graphene/boron-nitride Moiré superlattice structures.

Observation of an intrinsic bandgap and Landau level renormalization in graphene/boron-nitride heterostructures.

Van der Waals heterostructures formed by assembling different two-dimensional atomic crystals into stacks can lead to many new phenomena and device functionalities. In particular, graphene/boron-nitride heterostructures have emerged as a very promising system for band engineering of graphene. However, the intrinsic value and origin of the bandgap in such heterostructures remain unresolved.