Electrodeposition of CuNiSnS absorber layer on FTO substrate for solar cell applications.

Potentiostatic and electrochemical impedance spectroscopy (EIS) measurements were recorded to study the nucleation and growth mechanisms of electrodeposited CuNiSnS (CNTS) thin films from aqueous solution at different applied potentials. The electrodeposition process of Cu-Ni-Sn-S precursors were studied using cyclic voltammetry and chronoamperometry techniques. The nucleation and growth mechanism of these films was found to follow a three-dimensional progressive nucleation limited by diffusion-controlled growth.

Improving photoluminescence properties and reducing recombination of CsPbBr perovskite through lithium doping.

This study investigates the impact of lithium doping on the structural and photophysical properties of spin-coated CsPbBr perovskite thin films. The deposited films display a pristine structure, preferentially growing along the (220) direction, and exhibit high-quality green photoluminescence at around 530 nm. The doping leads to an improvement in the optical properties of the films, as evidenced by a stronger photoluminescence (PL) intensity compared to undoped CsPbBr, particularly at temperatures below 200 K.

Current state of copper-based bimetallic materials for electrochemical CO reduction: a review.

The increasing CO concentration in the atmosphere has caused profound environmental issues such as global warming. The use of CO as a feedstock to replace traditional fossil sources holds great promise to reduce CO emissions. The electrochemical conversion of CO has attracted much attention because it can be powered by renewable sources such as solar energy.

Effect of doping on the phase stability and photophysical properties of CsPbIBr perovskite thin films.

In this study, we demonstrate that the crystallization process of CsPbIBr films can be modulated when small amounts of additives are added to the precursor solution, leading to the formation of the bright brownish α-phase perovskite films with high orientation along the [100] crystallographic direction. Doped CsPbIBr films exhibit improved crystallinity, with high coverage, large grain size and pinhole-free surface morphology, suitable for making high performance optoelectronic devices. We also explored the role of Cl in the photophysical properties of CsPbIBr perovskite films using the temperature dependent photoluminescence technique.