Ultra-compact diode-pumped single-frequency Ti:sapphire laser.

In this Letter, we report on the development of an ultra-compact single-frequency Ti:sapphire laser under direct diode pumping. Single-longitudinal-mode operation is realized from a miniature plane-parallel resonator using a volume Bragg grating as an output coupler. InGaN laser diodes operating at around 470 nm and 490 nm with a combined power of 6.

Broadly tunable femtosecond pulses around 2.06 µm from a diode-pumped Tm-doped solid-state laser source.

We report on a broadly tunable diode-pumped femtosecond Tm:LuScO laser source around 2.06 µm. Tuning was obtained through the use of a steeply diving birefringent filter, maintaining sub-600 fs pulses over a tuning range of 2019-2110 nm.

Ultrafast diode-pumped Ti:sapphire laser with broad tunability.

We report a broadly wavelength-tunable femtosecond diode-pumped Ti:sapphire laser, passively mode-locked using both semiconductor saturable absorber mirror (SESAM) and Kerr-lens mode-locking (KLM) techniques. Using two pump laser diodes (operating at 450 nm), an average output power as high as 433 mW is generated during mode-locking with the SESAM. A tunability range of 37 nm (788-825 nm) was achieved with the shortest pulse duration of 62 fs at 812 nm.

Diode-pumped femtosecond Tm-doped LuScO laser near 2.1 μm.

We report on the first demonstration, to the best of our knowledge, of a diode-pumped Tm:LuScO laser. Efficient and broadly tunable continuous wave operation in the 1973-2141 nm region and femtosecond mode-locking through the use of an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror are realized. When mode-locked, near-transform-limited pulses as short as 170 fs were generated at 2093 nm with an average output power of 113 mW and a pulse repetition frequency of 115.

1.9 µm waveguide laser fabricated by ultrafast laser inscription in Tm:LuO ceramic.

The ultrafast laser inscription technique has been used to fabricate channel waveguides in Tm-doped LuO ceramic gain medium for the first time to our knowledge. Laser operation has been demonstrated using a monolithic microchip cavity with a continuous-wave Ti:sapphire pump source at 796 nm. The maximum output power achieved from the Tm:LuO waveguide laser was 81 mW at 1942 nm.

Fundamentally mode-locked, femtosecond waveguide oscillators with multi-gigahertz repetition frequencies up to 15 GHz.

We demonstrate passively mode-locked Yb(3+)-doped glass waveguide lasers in a quasi-monolithic configuration with a maximum pulse repetition frequency up to 15.2 GHz. A semiconductor saturable absorber mirror (SESAM) is used to achieve stable mode-locking around 1050 nm with pulse durations as short as 811 fs and an average power up to 27 mW.

Diode-pumped femtosecond solid-state waveguide laser with a 4.9 GHz pulse repetition rate.

We report on the first demonstration of a passively mode-locked, diode-pumped, monolithic Yb:glass channel waveguide laser that incorporates a semiconductor saturable absorber mirror. Stable and self-starting mode-locking is achieved in a Fabry-Perot cavity configuration producing a pulse repetition rate up to 4.9 GHz.

Broadly tunable femtosecond Tm:Lu2O3 ceramic laser operating around 2070 nm.

Femtosecond mode locking of a Tm-doped Lu2O3 ceramic laser is reported. Transform-limited pulses as short as 180 fs are generated at 2076 nm with an average output power of 400 mW and a pulse repetition frequency of 121.2 MHz.

The development and application of femtosecond laser systems.

Some background as well as recent progress in the development of femtosecond lasers are discussed together with a brief outline of a few representative emergent applications in biology and medicine that are underpinned by access to such sources. We also provide a short summary of other contributions in this focus issue.

Passively mode locked femtosecond Tm:Sc2O3 laser at 2.1 μm.

We report on the passive mode locking of a Tm3+:Sc2O3 laser at 2.1 μm using a semiconductor saturable absorber mirror based on InGaAsSb quantum wells. Transform-limited 218 fs pulses are generated with an average power of 210 mW.

Passive mode locking of an in-band-pumped Ho:YLiF4 laser at 2.06 μm.

We demonstrate the passive mode-locking operation of an in-band-pumped Ho:YLiF(4) laser at 2.06 μm using a semiconductor saturable absorber mirror based on InGaAsSb quantum wells. A transform-limited pulse train with minimum duration of 1.

Broadly tunable femtosecond mode-locking in a Tm:KYW laser near 2 μm.

Efficient mode-locking in a Tm:KY(WO(4))(2) laser is demonstrated by using InGaAsSb quantum-well SESAMs. Self-starting ultrashort pulse generation was realized in the 1979-2074 nm spectral region. Maximum average output power up to 411 mW was produced around 1986 nm with the corresponding pulse duration and repetition rate of 549 fs and 105 MHz respectively.

Lasing action at around 1.9 μm from an ultrafast laser inscribed Tm-doped glass waveguide.

We report optical guiding and laser action at around 1.9 μm in a Tm³⁺-doped fluorogermanate glass waveguide fabricated using ultrafast laser inscription. A monolithic laser cavity was constructed by directly butt coupling dielectric mirrors to each facet of the 6.

Femtosecond mode-locked Tm(3+) and Tm(3+)-Ho(3+) doped 2 μm glass lasers.

We report on the spectroscopic characterization, continuous-wave and continuous wave mode-locked laser performance of bulk Tm(3+):GPNG fluorogermanate and Tm(3+)-Ho(3+):TZN tellurite glass lasers around 2 μm. A slope efficiency of up to 50% and 190 mW of output power were achieved from the Tm(3+):GPNG laser at 1944 nm during continuous wave operation. The Tm(3+)-Ho(3+):TZN laser produced a 26% slope efficiency with a maximum output power of 74 mW at 2012 nm.

Femtosecond (191 fs) NaY(WO4)2 Tm,Ho-codoped laser at 2060 nm.

We report, for the first time to our knowledge, femtosecond-pulse operation of a Tm,Ho:NaY(WO(4))(2) laser at around 2060 nm. Transform-limited 191 fs pulses are produced with an average output power of 82 mW at a 144 MHz pulse repetition frequency. Maximum output power of up to 155 mW is generated with a corresponding pulse duration of 258 fs.

Ultrashort-pulse laser with an intracavity phase shaping element.

A novel ultrashort-pulse laser cavity configuration that incorporates an intracavity deformable mirror as a phase control element is reported. A user-defined spectral phase relation of 0.7 radians relative shift could be produced at around 1035 nm.

Continuous-wave laser operation of Tm and Hoco-doped NaY(WO(4))(2) and NaLu(WO(4))(2) crystals.

Tetragonal single crystals of NaT(WO(4))(2) (T = Y or Lu) co-doped with Tm(3+) and Ho(3+) ions have been employed for broadly tunable and efficient room-temperature laser operation at around 2 mum. With Ti:sapphire laser pumping at 795 nm, a slope efficiency and a maximum output power as high as 48% and 265 mW, respectively, have been achieved at 2050 nm from a Tm,Ho:NaY(WO(4))(2) crystal. Tuning from 1830 nm to 2080 nm has also been obtained using an intracavity Lyot filter.

Femtosecond pulse operation of a Tm,Ho-codoped crystalline laser near 2 microm.

We demonstrate, for the first time to our knowledge, femtosecond-regime mode locking of a Tm,Ho-codoped crystalline laser operating in the 2 microm spectral region. Transform-limited 570 fs pulses were generated at 2055 nm by a Tm,Ho:KY(WO(4))(2) laser that produced an average output power of 130 mW at a pulse repetition frequency of 118 MHz. Mode locking was achieved using an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror.

Ultrafast laser inscribed Yb:KGd(WO4)2 and Yb:KY(WO4)2 channel waveguide lasers.

We demonstrate laser action in diode-pumped microchip monolithic cavity channel waveguides of Yb:KGd(WO(4))(2) and Yb:KY(WO(4))(2) that were fabricated by ultrafast laser writing. The maximum output power achieved was 18.6 mW with a threshold of approximately 100 mW from an Yb:KGd(WO(4))(2) waveguide laser operating at 1023 nm.

Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 microm.

We report the first demonstration, to our knowledge, of passive mode locking in a Tm(3+), Ho(3+)-codoped KY(WO(4))(2) laser operating in the 2000-2060 nm spectral region. An InGaAsSb-based quantum well semiconductor saturable absorber mirror is used for the initiation and stabilization of the ultrashort pulse generation. Pulses as short as 3.

Spectroscopic and lasing performance of Tm3+-doped bulk TZN and TZNG tellurite glasses operating around 1.9 microm.

We report spectroscopic and bulk laser performance characteristics for Tm(3+)-doped tellurite glasses when used as gain media operating around 1.9 microm. Two glass hosts studied are TZN and TZNG and their performances have been compared.

Femtosecond pulse generation around 1500 nm using a GaInNAsSb SESAM.

The operation of a femtosecond Cr(4+):YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230 fs pulses centred at 1528 nm were generated at an average output power of 280 mW. The SESAM exhibited a low saturation fluence of 10 microJ/cm(2) and a short recovery time of 12 ps.

Enhanced operation of femtosecond lasers and applications in cell transfection.

In this work we present a review and discussion on the enhancement of femtosecond (fs) lasers for use within biophotonics with a particular focus on their use in optical transfection techniques. We describe the broad range of source options now available for the generation of femtosecond pulses before briefly reviewing the application of fs laser in optical transfection studies. We show that major performance enhancements may be obtained by optimising the spatial and temporal performance of the laser source before considering possible future directions in this field.

Continuous-wave and Q-switched operation of a compact, diode-pumped Yb3+:KY(WO4)2 planar waveguide laser.

A diode-pumped LPE-grown Yb:KYW planar waveguide laser is demonstrated in a microchip monolithic cavity configuration. Output powers as high as 148 mW and thresholds as low as 40 mW were demonstrated during continuous-wave operation. Pulses of 170 ns duration with maximum pulse energy of 44 nJ at a 722 kHz repetition rate were generated when Q-switched using a semiconductor saturable absorber mirror.

Pulsed laser operation of Y b-dope d KY(WO(4))(2) and KGd(WO(4))(2).

Spectroscopic properties and laser performance of Y b-doped tungstates at pulsed Ti:sapphire laser pumping are reported. Room-temperature lasing near 1025nm is demonstrated in Yb:KY(WO(4))(2) and Yb:KGd(WO(4))(2), with a slope efficiency as great as 86.9%.