Simulation of the backscattered electron intensity of multi layer structure for the explanation of secondary electron contrast.

The intensities of the secondary electrons (SE) and of the backscattered electrons (BSE) at energy 100 eV have been measured on a Ni/C/Ni/C/Ni/C/(Si substrate) multilayer structure by exciting it with primary electrons of 5, 2.5 and 1.25 keV energies.

Non-destructive depth profiling of the activated Ti-Zr-V Getter by means of excitation energy resolved photoelectron spectroscopy.

Non-evaporable Ti-Zr-V ternary getters (NEGs) were studied by means of excitation energy resolved photoelectron spectroscopy (ERXPS). We attempted a quantitative study of the in-depth redistribution of the NEG components during activation. The samples were prepared ex-situ by DC magnetron sputtering on a stainless-steel substrate.