Publications by authors named "L E Jauregui"
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density.
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- Researchers have developed a method to grow ultrathin bismuth crystals (less than 10 nm thick) using a nanoscale mould made from atomically flat van der Waals materials like hexagonal boron nitride.
- *This process results in unique electronic properties due to quantum confinement, isolating effective surface states that allow for advanced transport studies, including quantum oscillations.
- *The technique not only enhances the understanding of bismuth's electronic behavior but also offers a cost-effective way to create and integrate ultrathin crystals into various electronic structures.
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View Article and Find Full Text PDFEmploying flux-grown single crystal WSe_{2}, we report charge-carrier scattering behaviors measured in h-BN encapsulated monolayer field effect transistors. We observe a nonmonotonic change of transport mobility as a function of hole density in the degenerately doped sample, which can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path (>500 nm), we also demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically defined quantum point contact, showing the potential for creating ultrahigh quality quantum optoelectronic devices based on atomically thin semiconductors.
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- The study explores the fine-tuning of topologically protected states in quantum materials, highlighting the potential for innovative electronic devices through efficient modulation of the crystal lattice.
- After applying significant strain to HfTe samples, researchers observed a topological phase transition from weak to strong topological insulator, with a drastic increase in resistivity by 190,500%.
- The findings emphasize HfTe's capability for engineering topological properties, suggesting broader applications for examining topological phase transitions in van der Waals materials and heterostructures.